Nie, Jin-Hua Li, Rui Miao, Mao-Peng Fu, Ying-Shuang Zhang, Wenhao
Published in
Materials Futures
A 2D heterostructure with proximity coupling of magnetism and topology can provide enthralling prospects for hosting new quantum states and exotic properties that are relevant to next-generation spintronic devices. Here, we synthesize a delicate van der Waals (vdW) heterostructure of CrTe2/Bi2Te3 at the atomic scale via molecular beam epitaxy. Low-...
abramkin, demid s. petrushkov, mikhail o. bogomolov, dmitrii b. emelyanov, eugeny a. yesin, mikhail yu. vasev, andrey v. bloshkin, alexey a. koptev, eugeny s. putyato, mikhail a. atuchin, victor v.
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In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods. The growth conditions for the SAQDs’ formation by molecular beam epitaxy on both matched GaP and artificial GaP/Si substrates were determined. An almost complete plastic relaxation of th...
marchewka, michał jarosz, dawid ruszała, marta juś, anna krzemiński, piotr płoch, dariusz maś, kinga wojnarowska-nowak, renata
We demonstrate strain-balanced InAs/AlSb type-II superlattices (T2SL) grown on GaSb substrates employing two kinds of interfaces (IFs): AlAs-like IF and InSb-like IF. The structures are obtained by molecular beam epitaxy (MBE) for effective strain management, simplified growth scheme, improved material crystalline quality, and improved surface qual...
mulder, liesbeth van de glind, hanne brinkman, alexander concepción, omar
The study of the exotic properties of the surface states of topological insulators requires defect-free and smooth surfaces. This work aims to study the enhancement of the surface morphology of optimally doped, high-crystalline (Bi0.4Sb0.6)2Te3 films deposited by molecular beam epitaxy on Al2O3 (001) substrates. Atomic force microscopy shows that b...
Pantle, Florian Wörle, Simon Karlinger, Monika Rauh, Felix Kraut, Max Stutzmann, Martin
Published in
Nanotechnology
Nanostructures exhibit a large surface-to-volume ratio, which makes them sensitive to their ambient conditions. In particular, GaN nanowires and nanofins react to their environment as adsorbates influence their (opto-) electronic properties. Charge transfer between the semiconductor surface and adsorbed species changes the surface band bending of t...
feddersen, stefan zolatanosha, viktoryia alshaikh, ahmed reuter, dirk heyn, christian
Site-controlled Ga droplets on AlGaAs substrates are fabricated using area-selective deposition of Ga through apertures in a mask during molecular beam epitaxy (MBE). The Ga droplets can be crystallized into GaAs quantum dots using a crystallization step under As flux. In order to model the complex process, including the masked deposition of the dr...
kim, yeonhwa madarang, may angelu eunkyo, ju laryn, tsimafei chu, rafael jumar kim, tae soo ahn, dae-hwan kim, taehee lee, in-hwan choi, won jun
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Epitaxial growth of III–V materials on Si is a promising approach for large-scale, relatively low-cost, and high-efficiency Si-based multi-junction solar cells. Several micron-thick III–V compositionally graded buffers are typically grown to reduce the high threading dislocation density that arises due to the lattice mismatch between III–V and Si. ...
Lu, Hui Liu, Wenji Wang, Haolin Liu, Xiao Zhang, Yiqiang Yang, Deren Pi, Xiaodong
Published in
Nanotechnology
Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have gained extensive interest due to their unique properties. The 2D layered materials prepared on epitaxial graphene/silicon carbide (EG/SiC) surface by molecular beam epitaxy (MBE) have high quality, which can be directly applied without further transfer to othe...
jalil, abdur rehman schüffelgen, peter valencia, helen schleenvoigt, michael ringkamp, christoph mussler, gregor luysberg, martina mayer, joachim grützmacher, detlev
Quasi-one-dimensional (1D) topological insulators hold the potential of forming the basis of novel devices in spintronics and quantum computing. While exposure to ambient conditions and conventional fabrication processes are an obstacle to their technological integration, ultra-high vacuum lithography techniques, such as selective area epitaxy (SAE...
kölzer, jonas jalil, abdur rehman rosenbach, daniel arndt, lisa mussler, gregor schüffelgen, peter grützmacher, detlev lüth, hans schäpers, thomas
In this paper, in an in situ prepared three-terminal Josephson junction based on the topological insulator Bi4Te3 and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias currents reveal extended areas of Josephson supercurrent, including coupling effects between adjacent superconduc...