Kawata, Hiromu Hasegawa, Sho Nishinaka, Hiroyuki Yoshimoto, Masahiro
Published in
Semiconductor Science and Technology
We investigated the effect of inserting a compositionally graded layer at the GaAsBi/GaAs interface on the photovoltaic and light-emission properties of GaAs/GaAsBi pin diodes. When the pin diode is operated as a solar cell, inserting a graded layer improves the open-circuit bandgap–voltage offset (W oc) to 0.51 V. This is comparable to or better t...
Gozu, Shin-Ichiro
Published in
Semiconductor Science and Technology
InSb layers on germanium (Ge) substrates were studied and compared with those on GaAs substrates. InSb layers were grown via molecular beam epitaxy, and their crystalline and photoluminescence (PL) properties were investigated. As the growth of InSb on Ge represents the growth of a polar semiconductor on a nonpolar semiconductor, the polarity of In...
Paulauskas, T Devenson, J Stanionytė, S Skapas, M Karpus, V Čechavičius, B Tumėnas, S Strazdienė, V Šebeka, B Pačebutas, V
...
Published in
Semiconductor Science and Technology
Molecular beam epitaxy growth and analysis of GaAsBi on compositional step-graded InGaAs buffer layers are presented in this study. The developed buffer is only 240 nm thick, exhibits very low surface roughness while reaching up to 0.46% lattice-mismatch with a GaAs substrate. Reciprocal-space mappings showed that 500 nm thick GaAsBi layers with 2....
Raj Gosain, Saransh Bellet-Amalric, Edith den Hertog, Martien André, Régis Cibert, Joël
Published in
Nanotechnology
The early stage of growth of semiconductor nanowires is studied in the case where the sidewall adatoms have a short diffusion length due to a strong desorption. Experimental results are described for the growth of ZnSe nanowires by molecular beam epitaxy. They are discussed and interpreted using the Burton–Cabrera–Frank description of the propagati...
Hsiao, Sheng-Wei Yang, Chu-Shou Yang, Hao-Ning Wu, Chia-Hsing Wu, Ssu-Kuan Chang, Li-Yun Ho, Yen-Teng Chang, Shu-Jui Chou, Wu-Ching
Published in
Frontiers in Materials
A two-dimensional (2D) material known as indium selenide (InSe) is widely considered a promising layered semiconductor with potential applications in electronics and optoelectronics. However, the single phase of InSe is still a challenge due to the close formation energy of InSe and In2Se3. In this study, we demonstrate a novel growth method for 2D...
Hao, H M Su, X B Liu, H Q Shang, X J Ni, H Q Niu, Z C
Published in
Journal of Physics: Conference Series
The integration of III/V materials into silicon-based microelectronics has been the momentum in the development progress of silicon photonics in the past few decades. In this paper, the growth of InAs/GaAs quantum dots with the high density of 6.5 × 1010/cm2 on silicon substrate is demonstrated. The influence of different deposition amount of indiu...
Guha, Puspendu Park, Joon Young Jo, Janghyun Chang, Yunyeong Bae, Hyeonhu Saroj, Rajendra Kumar Lee, Hoonkyung Kim, Miyoung Yi, Gyu-Chul
Published in
2D Materials
We report on heteroepitaxial growth of Sb2Te3–Bi2Te3 lateral heterostructures using molecular beam epitaxy. The lateral heterostructures were fabricated by growing Bi2Te3 islands of hexagonal or triangular nanostructures with a typical size of several 100 nm and thickness of ∼15 nm on graphene substrates and Sb2Te3 laterally on the side facets of t...
Bucamp, A Coinon, C Lepilliet, S Troadec, D Patriarche, G Diallo, M H Avramovic, V Haddadi, K Wallart, X Desplanque, L
...
Published in
Nanotechnology
In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and alloy composition fluctuations at the nanoscale on ...
Tang, Tianyi Yu, Tian Yang, Guanqing Sun, Jiaqian Zhan, Wenkang Xu, Bo Zhao, Chao Wang, Zhanguo
Published in
Journal of Semiconductors
InAs/GaAs quantum dot (QD) lasers were grown on silicon substrates using a thin Ge buffer and three-step growth method in the molecular beam epitaxy (MBE) system. In addition, strained superlattices were used to prevent threading dislocations from propagating to the active region of the laser. The as-grown material quality was characterized by the ...
Payne, J A Bryant, C T Marquez Tavera, R Brown, D T Pekarek, T M Warusawithana, M P
Published in
Materials Research Express
We have investigated the collective electronic and magnetic orderings of a series of La1−x Sr x MnO3 thin films grown epitaxially strained to (001) oriented strontium titanate substrates as a function of doping, x, for 0 ≤ x ≤ 0.4. We find that the ground states of these crystalline thin films are, in general, consistent with that observed in bulk ...
