Published in Japanese Journal of Applied Physics
We study epitaxial growth and physical properties of heavily Fe-doped quaternary-alloy ferromagnetic semiconductor (In0.84−x ,Ga x ,Fe0.16)Sb thin films (Ga content x = 2%–10%, Fe content fixed at 16%). The (In0.84−x ,Ga x ,Fe0.16)Sb films have a zinc-blende-type crystal structure without any other second phase, and all the samples exhibit intrinsi...
Published in Japanese Journal of Applied Physics
InAs/InAsSb ultrahigh-density quantum dots (UHD QDs) with a density of 1×1012cm−2 were fabricated using MBE, and their photoluminescence (PL) properties were characterized. Through temperature dependences of PL energy, intensity and decay time of UHD QDs, it was found that in-plane strong coupling between adjacent QDs of excited and ground states d...
By encapsulating self-assembled layers of optically-active organic molecules between atomically thin insulating layers, van der Waals heterostructures can be fabricated which incorporate these encapsulated molecules between two graphene electrodes. The thin, transparent insulating layers allow the optical properties of the molecules to be investiga...
This work reports on the effect of Bi concentration on the structural and optical properties of dilute GaAs(1− x)Bix Single Quantum Well (SQWs) grown by molecular beam epitaxy (MBE) on (001) GaAs substrates. The influence of Bi content has been studied by X-Ray Diffraction (XRD), Raman spectroscopy, and Photoluminescence (PL) measurements. The PL s...
Published in Nanotechnology
Vertically grown nanowires (NWs) are a research interest in optoelectronics and photovoltaic applications due to their high surface to volume ratio and good light trapping capabilities. This study presents the effects of process and design parameters on self-catalyzed GaAsSbN NWs grown by plasma-assisted molecular beam epitaxy on patterned silicon ...
Published in Journal of Physics D: Applied Physics
We discuss the electrical properties of molecular beam epitaxy (MBE) grown, modulation doped, Ge1−x Sn x quantum well devices. A consequence of the epitaxial growth process is that electronic disorder is introduced even in modulation doped quantum well structures and electrical transport properties that are characteristic of a high level of disorde...
Published in 2D Materials
We prepared two-dimensional concentric lateral heterostructures of the monolayer transition metal dichalcogenides MoS2 and TaS2 by reactive molecular beam epitaxy on chemically inert and weakly interacting Au(111). The heterostructures are in a size regime where quantum confinement can be expected. Despite large lattice mismatch a seamless intercon...
Published in 2D Materials
2D material epitaxy offers the promise of new 2D/2D and 2D/3D heterostructures with their own specific electronic and optical properties. In this work, we demonstrate the epitaxial growth of few layers WSe2 on GaP(111)B by molecular beam epitaxy. Using a combination of experimental techniques, we emphasize the role of the growth temperature and of ...
Published in Nanotechnology
Topological crystalline insulators (TCIs) are interesting for their topological surface states, which hold great promise for scattering-free transport channels and fault-tolerant quantum computing. A promising TCI is SnTe. However, Sn-vacancies form in SnTe, causing a high hole density, hindering topological transport from the surface being measure...
Published in Semiconductor Science and Technology
We explore the impact of carrier concentration, temperature, and bismuth (Bi) composition on the carrier mobility of indium antimonide-bismide (InSb1−x Bi x ) material. Utilizing the molecular beam epitaxy method, we achieved high Bi composition uniformity. This method also enables the InSb1−x Bi x to be grown on semi-insulating GaAs substrate, eff...
