Published in Bulletin of Materials Science
Wurtzite–Al1−xScxN thin films deposited by solid-state alloying of AlN with ScN exhibit high piezoelectric coefficient and large band gap that makes it a promising material for a variety of applications in piezo-electronics, electronic, acoustoelectric devices, etc. Research on epitaxial Al1−xScxN growth in wurtzite crystal structure is still at an...
Published in Semiconductors
AbstractWe report the results of systematic experimental and theoretical studies of structural and dynamical properties of short-period GaN/AlN superlattices. The multilayer structures with the thicknesses of the constituent layers varying from two to several monolayers are grown using the submonolayer digital molecular beam epitaxy technique. In t...
Published in ACS nano
Puckered honeycomb Sb monolayer, the structural analog of black phosphorene, has been recently successfully grown by means of molecular beam epitaxy. However, little is known to date about the growth mechanism for such a puckered honeycomb monolayer. In this study, by using scanning tunneling microscopy in combination with first-principles density ...
Published in Technical Physics Letters
AbstractWe demonstrate the possibility of selective-area growth of ordered arrays of GaN nanowires by molecular beam epitaxy on SiOx/Si substrates patterned by photolithography with microspherical lenses without the preliminary formation of seed layers. The effect of the substrate temperature on the morphological properties of the obtained arrays o...
Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and non-volatile electronic devices based on vertical and co-planar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolay...
Published in Optics and Spectroscopy
AbstractThe electrophysical and phosphorescence characteristics, as well as the surface morphology, of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (110) crystallographic orientation are studied. The silicon-doped epitaxial layers were grown at temperatures from 410 to 680°C with arsenic-to-gallium flux ratios from 14 to 8...
Published in Journal of physics. Condensed matter : an Institute of Physics journal
Intrinsic magnetic topological insulator MnBi2Te4is the key to realizing the quantum anomalous Hall effect and other related quantum phenomena at a sufficiently high temperature for their practical electronic applications. The research progress on the novel material, however, is severely hindered by the extreme difficulty in preparing its high-qual...
Layered materials held together by weak van der Waals (vdW) interactions are a promising class of materials in the field of nanotechnology. Besides the potential for single layers, stacking of various vdW layers becomes even more promising since unique properties can hence be precisely engineered. The synthesis of stacked vdW layers, however, remai...
Published in Nanomaterials
This paper presents the magnetic properties of chrome ion (Cr+) implanted InxGa1−xN (x = 0.1, 0.3, 0.5 and 1.0) nanostructures grown by molecular beam epitaxy (MBE). The Cr+ implantation was conducted at 110 keV with three doses, namely 2.6 × 1015, 5.3 × 1015, and 1.3 × 1016 ions/cm2. The as-grown nanostructures exhibited diamagnetism before and af...
Published in Semiconductors
AbstractIn a particular case of Au-catalyzed InxGa1 –xAs nanowires, wide compositional tuning has been obtained using metal organic vapor-phase epitaxy, which remains difficult for molecular beam epitaxy. InxGa1 –xAs nanowires are demonstrated with x = 0.5, grown by Au-catalyzed molecular beam epitaxy via the vapor–solid–solid mode at a low tempera...
