In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots
Correlation between strain and the metal-insulator transition in epitaxial V2O3 thin films grown by Molecular Beam Epita...
We report on the deposition of high quality epitaxial V2O3 thin films on (0001) oriented Al2O3 substrates with Molecular Beam Epitaxy. Growth of smooth V2O3 films with root mean square roughness values down to 1 angstrom exhibiting both bulk-like and non bulk-like electrical properties has already been reported in a previous contribution. In this w...
Electrical properties of Er-doped In0.53Ga0.47As
Electrical properties of Er-doped In0.53Ga0.47As
Electrical properties of Er-doped In0.53Ga0.47As
Electrical properties of Er-doped In0.53Ga0.47As
Electrical properties of Er-doped In0.53Ga0.47As
Electrical properties of Er-doped In0.53Ga0.47As
Electrical properties of Er-doped In0.53Ga0.47As
Electrical properties of Er-doped In0.53Ga0.47As
