The Bragg light reflection spectra of inverted opal-GaN composite registered at a fixed angle of light incidence on the growth surface of a sample, but different azimuth positions relative to incident radiation are presented. Significant influence of the azimuth sample orientation on the shape of the reflection spectra caused by multiple Bragg diff...
A 1.1 mu m high-power quantum dot superluminescent diode has been fabricated by using a two-section device structure which consists of a superluminescent section and an optical amplifier section. The device exhibits 380 mW output power with 50 nm bandwidth or 260 mW output power with 66 nm bandwidth.
A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection (AR) coating. Tuning bandwidths of 106 nm and 117 nm are achieved under 3-A and 3.5-A inj...
NIR technology is a rapid, nondestructive and user-friendly method ideally suited for Qualitative analysis. In this paper the authors present the use of discriminant partial least Squares (DPLS)-based linear discriminant analysis (LDA) in corn qualitative near infrared spectroscopy analysis. Firstly, a training set including 30 corn varieties (each...
Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed f...
We studied the influence of high temperature AlN buffer thickness on the property of GaN film on Si (1 1 1) substrate. Samples were grown by metal organic chemical vapor deposition. Optical microscopy, atomic force microscopy and X-ray diffraction were employed to characterize the samples. The results demonstrated that thickness of high temperature...
Catalyst-free, vertical array of InAs nanowires (NWs) are grown on Si (111) substrate using MOCVD technique. The as- grown InAs NWs show a zinc- blende crystal structure along a direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth tempe...
