Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells
A practical route towards fabricating GaN nanowire arrays
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GaN nanowire (NW) arrays have been fabricated by the electrodeless photoelectrochemical (PEC) etching method for the first time. Under appropriate conditions, the etching process is just a dislocation-hunted process, in which the etching solution "digs down'' along the threading dislocations, resulting in the formation of GaN NWs by preferentially ...
High-power quantum dot superluminescent diode with integrated optical amplifier section
A 1.1 mu m high-power quantum dot superluminescent diode has been fabricated by using a two-section device structure which consists of a superluminescent section and an optical amplifier section. The device exhibits 380 mW output power with 50 nm bandwidth or 260 mW output power with 66 nm bandwidth.
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device
A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection (AR) coating. Tuning bandwidths of 106 nm and 117 nm are achieved under 3-A and 3.5-A inj...
Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate
Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging
An interesting phonon mode at around 685-705 cm(-1) was clearly observed in the Raman spectra of InGaN/GaN multiple-quantum-wells nanopillars with different diameters at room temperature. The Raman peak position of this mode is found to show a distinct dependence on the nanopillar size, which is in well agreement with theoretical calculation of the...
One-pot synthesis, optical property and self-assembly of monodisperse silver nanospheres
High-quality spherical silver (Ag) nanocrystals have been synthesized by using a one-pot approach, in which pre-synthesis of organometallic precursors is not required. This reaction involves the thermolysis of a mixed solution of silver acetate and n-dodecanethiol in a non-coordinating organic solvent. The size of the as-obtained Ag nanospheres can...
Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughene...
Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes(VLEDs). The electrical characteristics of VLEDs with n-type contacts on a roughened and flat N-polar surface have been compared. VLEDs with contacts deposited on a roughened surface exhibit lower leakage currents yet a hig...
