Rafael Velayarce, Jorge Motz, Christian
Published in
Materials
Beam deflection experiments were used to systematically examine size effects on the low cyclic fatigue (LCF) deformation behaviour of micro-sized bending beams of copper (Cu) single crystals oriented for single slip, critical and coplanar double slip. We present cyclic hardening curves and fatigue surface roughness, as well as dislocations structur...
Tsinas, Zois Forster, Amanda L Al-Sheikhly, Mohamad
Published in
Polymer degradation and stability
This work demonstrates the synergy between the thermo-mechanical and humidity induced degradation as well as the oxidation reactions in the kink-banded areas of ultra-high molar mass polyethylene (UHMMPE) fiber-based laminates used in body armor. For aged materials, the energy-dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spect...
Nizolek, Thomas Joseph
Metallic nanolaminates are a class of nanocrystalline materials composed of alternating layers of two or more dissimilar metals. These materials offer several advantages over traditional single phase nanocrystalline metals; their lamellar architecture and often immiscible constituent phases provide improved thermal stability and resistance to grain...
Piazolo, S. Montagnat, M. Grennerat, F. Moulinec, H. Wheeler, J.
This work presents a coupled experimental and modeling approach to better understand the role of stress field heterogeneities on deformation behavior in material with a high viscoplastic anisotropy e.g. polycrystalline ice. Full-field elasto-viscoplastic modeling is used to predict the local stress and strain field during transient creep in a polyc...
Poriķe, E. Andersons, J.
Published in
Mechanics of Composite Materials
The application of hemp fibers as a reinforcement of composite materials necessitates the characterization of fiber strength scatter and the effect of fiber length on its strength. With this aim, elementary hemp fibers were tested in tension at two different gage lengths. Due to the similar morphology of hemp and flax fibers, the probabilistic stre...
SHEKHAR, SHASHANK BHOLA, A M SAKLANI, P S
Published in
Journal of Earth System Science
This paper deciphers the late stress systems involved in the development of kink bands in the perspective of thrust regime. In kink bands, the correlation coefficient for α–β plots is positive near thrusts and negative away from thrusts. The plots show nearly linear relationship near thrusts and non-linear relationship away from thrusts. The rotati...
Liu, JQ Huang, J Gong, XJ Wang, JF Xu, K Qiu, YX Cai, DM Zhou, TF Ren, GQ Yang, H
...
GaN nanowire (NW) arrays have been fabricated by the electrodeless photoelectrochemical (PEC) etching method for the first time. Under appropriate conditions, the etching process is just a dislocation-hunted process, in which the etching solution "digs down'' along the threading dislocations, resulting in the formation of GaN NWs by preferentially ...
wei, m wang, xl pan, x xiao, hl wang, cm yang, cb wang, zg
Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed f...
jf, he wang, hl shang, xj mf, li zhu, y wang, lj yu, y hq, ni yq, xu niu, zc
...
Molecular beam epitaxy growth of GaAs-based long-wavelength metamorphic InAs/InGaAs quantum dots (QDs) is investigated. With optimized multi-step-graded InGaAs metamorphic buffer layers and growth conditions, room temperature 1.46 mu m emission from InAs/In(0.15)Ga(0.85)As QDs is realized, and broad-area laser diodes are fabricated with a very low ...
hu, q wei, tb duan, rf yang, jk huo, zq tc, lu zeng, yp univ, hu q r sichuan
Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not onl...