The enrichment of raw sensor data with contextual information is essential to enabling interoperability and the automation of data analysis in Industry 4.0 applications. In this paper an ontology to describe the dynamic transfer behavior of calibrated sensors in a metrologically consistent manner is presented. By merging and extending commonly used...
Self-describing sensors and measurements are a key component to establish (semi-)automated data-analysis in the context of Industry 4.0. In this contribution, multiple popular ontologies and vocabularies in the field of metrology are evaluated regarding their suitability for an industry-oriented metrological use case. The results are used to map ne...
Published in EJIFCC
Globally, laboratories are producing, communicating, and exchanging millions of laboratory examination values to multiple parties every day. For most values, 'measurement units' are required to make the numerical values comparable and meaningful. However, a non-systematic use of 'measurement units' can create errors in communication between health ...
We report on our on-going effort to measure the Boltzmann constant, kB, using the Doppler Broadening Technique. The main systematic effects affecting the measurement are discussed. A revised error budget is presented in which the global uncertainty on systematic effects is reduced to 2.3 ppm. This corresponds to a reduction of more than one order o...
We combine interferometric lithography and inductively coupled plasma etching to fabricate GaAs subwavelength grating (SWG) which mimics the moth eye structures. Through the modification of morphology parameters, including profile, height and packing fraction, tapered, high-aspect-ratio and closely-packed GaAs SWGs are obtained. The measurement of ...
Low-voltage silicon (Si)-based light-emitting diode (LED) is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor (CMOS) technology. The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light sou...
E2SiO5 thin films were fabricated on Si substrate by reactive magnetron sputtering method with subsequent annealing treatment. The morphology properties of as-deposited films have been studied by scanning electron microscope. The fraction of erbium is estimated to be 23.5 at% based on Rutherford backscattering measurement in as-deposited Er-Si-O fi...
We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measur...
