Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions
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Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions
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Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene In...
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Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene In...
...
close
Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene In...
...
close
Injection Spectroscopy of Thin Layers of Solids
Published in Internal Photoemission Spectroscopy
Preliminary Remarks and Historical Overview
Published in Internal Photoemission Spectroscopy
Schottky barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000(1)over-bar), (1(1)over-bar-00) and (1(2)over-bar-10) f...
Schottky barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000(1)over-bar), (1(1)over-bar-00) and (1(2)over-bar-10) f...
Schottky barriers for Pt on 6H-and 4H-SiC (0001), (000(1)over-bar), (1(1)over-bar00) and (1(2)over-bar10) faces measured...
