Using internal photoemission of electrons from few-monolayer thin MoS2 films into SiO2 we found that the MoS2 layer transfer processing perturbs electroneutrality of the interface, leading to an increase of the electron barrier height by ≈0.5-1 eV as compared to the case of the same films synthesized directly on SiO2. This effect is associated with...
This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µ / m. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier &Phi / B of ~673 meV is extrapolated / the photodetectors show externa...
Published in Journal of Electronic Materials
The band offset at the interface of a heterojunction is one of the most important parameters determining the characteristics of devices constructed from heterojunction. Accurate knowledge of band offsets and their temperature dependence will allow one to simulate and predict the device performances. We present a temperature-dependent internal-photo...
Extended electron states in insulating oxide layers on Si and high-mobility semiconductors The electron energy band spectrum is of prime importance when attempting to engineer insulating stacks for application in metal-oxide semiconductor structures for practical applications. In particular, transition from traditional silicon to semiconductors wit...
Thanks to its good thermal stability, including resistance to oxidation, platinum (Pt) is widely used in prototyping a wide spectrum of electron devices ranging from metaloxide- semiconductor (MOS) transistors to resistive switching memory cells. In this work, the energy barriers for electrons between the Fermi level of Pt and the conduction band o...
Published in Internal Photoemission Spectroscopy
Published in Internal Photoemission Spectroscopy
Published in Journal of Electronic Materials
The energy band alignments of Ni/Al2O3/GaN heterostructures have been explored by internal photoemission (IPE) and capacitance–voltage (CV) measurements. By performing IPE measurements at both reverse- and forward-bias conditions, the Ni/Al2O3 Schottky barrier is found to be 2.9 ± 0.1 eV with the presence of a strong image force lowering effect, wh...
Spectroscopy of internal photoemission, photoconductivity, and optical absorption is used to characterize the differences in the electronic structure of interfaces of silicon with several oxides (Sc2O3, Lu2O3, LaLuO3) grown as epitaxial layers or as amorphous films. As compared to their crystalline counterparts, the amorphous oxides exhibit signifi...
