Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-d...
Preparation and photoluminescence study of patterned substrate quantum wires
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Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy(MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum...
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular...
Molecular beam epitaxy growth of an InxGa1-xAs/GaAs quantum well(QW) structure(x equals to0.17 or0.3) on offcut(100) Ge substrate has been investigated. The samples were characterized by atomic force microscopy, photoluminescence(PL), and high resolution transmission electron microscopy. High temperature annealing of the Ge substrate is necessary t...
Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering
We demonstrate by magneto-transport measurements that a Curie temperature as high as 200 K can be obtained in nanostructures of (Ga,Mn)As. Heavily Mn-doped (Ga,Mn)As films were patterned into nanowires and then subject to low-temperature annealing. Resistance and Hall effect measurements demonstrated a consistent increase of T(C) with decreasing wi...
Determining the sign of g factor via time-resolved Kerr rotation spectroscopy with a rotatable magnetic field
Time-resolved Kerr rotation spectroscopy is used to determine the sign of the g factor of carriers in a semiconductor material, with the help of a rotatable magnetic field in the plane of the sample. The spin precession signal of carriers at a fixed time delay is measured as a function of the orientation of the magnetic field with a fixed strength ...
2-5m InAs/GaSb superlattices infrared photodetector
High quality InAs/GaSb type-II band alignment superlattices infrared photodetectors with different InAs thicknesses were grown on GaSb and GaAs substrates by molecular beam epitaxy(MBE). The detection wavelengths of these InAs/GaSb SLs infrared detectors were2-5μm. The material and optical qualities of InAs/GaSb superlattices on different substrate...
Thermal characteristic of GaAs-based laser diodes
In order to analyze the thermal characteristic of GaAs-based laser diodes during degradation, aging tests were carried out under the conditions of the constant current stress for808 nm GaAs-based laser diodes. The temperature of active layer and the thermal resistance were investigated by using electrical method. It was found that the temperature o...
Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
The in-plane spin splitting of conduction-band electron has been investigated in an asymmetric (001) GaAs/Al(x)Ga(1-x)As quantum well by time-resolved Kerr rotation technique under a transverse magnetic field. The distinctive anisotropy of the spin splitting was observed while the temperature is below approximately 200 K. This anisotropy emerges fr...
Metal electrode influence on the wet selective etching of GaAs/AlGaAs
Metal electrodes were found to influence the wet selective etching of GaAs in a citric acid/hydrogen peroxide solution. The authors found that metal films such as a Cr/Au or Ti/Au alloy deposited on a semiconductor surface can mostly prevent the etching of GaAs. The GaAs sacrificial material that was exposed to the selective etchant near the metal ...
