A new method to measure the carrier concentration of p-GaN
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed f...
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
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Study on Optical Properties of Type-II SnO2/ZnS Core/Shell Nanowires
Omnidirectional absorption enhancement in hybrid waveguide-plasmon system
We investigate the omnidirectional absorption enhancement induced by the excitation of the localized surface plasmon in the hybrid system consisting of a gold nanowire array embedded in a slab waveguide. Assisted by the waveguide layer, the hybrid system can support the localized waveguide-plasmon resonances for a wide range of incident angles. The...
Measurement of wurtzite ZnO/rutile TiO(2) heterojunction band offsets by x-ray photoelectron spectroscopy
The valence-band offset of the wurtzite ZnO/rutile TiO(2) heterojunction was directly determined by x-ray photoelectron spectroscopy. The wurtzite ZnO (0001) layer was grown on commercial rutile (101) TiO(2) by metal-organic chemical-vapor deposition. The results show that the valence-band offset is 0.14 +/- 0.05 eV, which agrees well with previous...
Photorefractive Effect of a Liquid Crystal Cell with a ZnO Nanorod Doped in Only One PVA Layer
We observe obviously different diffraction efficiencies with forward and reverse dc voltages in a forced-light-scattering (FLS) experiment for a cell with ZnO nanorod doped in only one poly (vinyl alcohol) (PVA) layer. When a dc voltage with a positive pole on the ZnO nanorod doped side is applied, the excited charge carriers primarily move along t...
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
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Strong up-conversion emissions in ZnO:Er3+, ZnO:Er3+-Yb3+ nanoparticles and their surface modified counterparts
Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions
We fabricated (Ga,Mn)As/AlO(x)/Co(40)Fe(40)B(20) magnetic tunnel junctions with ferromagnetic semiconductor/insulator/ferromagnetic metal (S/I/F) structure. The treatments of pre-annealing and post-plasma cleaning on the (Ga,Mn) As film were introduced before the growth of the subsequent layers. A high tunneling magnetoresistance (TMR) ratio of 101...
