Omori, Minoru Nishimura, Michiaki
Published in
Japanese Journal of Applied Physics
Domain dynamics have been investigated for lead zirconate titanate, using a finite element method (FEM) approach. Both reorientation and translation motions of 90° domain walls (DWs) were considered, following our previous work on observations of DW motion by scanning electron microscopy and X-ray diffraction. For incorporating the DW motion in the...
Jana, Arun Rane, Shreeya Roy Choudhury, Palash Roy Chowdhury, Dibakar
Published in
Nanotechnology
Interactions of terahertz radiations with matter can lead to the realization of functional devices related to sensing, high-speed communications, non-destructive testing, spectroscopy, etc In spite of the versatile applications that THz can offer, progress in this field is still suffering due to the dearth of suitable responsive materials. In this ...
Wang, Zheng
Machine learning and artificial intelligence demand new non-volatility memory technologies suitable for in-memory computing and data-intensive applications with high integration density, ultra-fast read and write speed, and high energy efficiency. However, current memory technologies either suffer from low integration density or high energy consump...
Mohit, Wen, Yuli Hara, Yuki Migita, Shinji Ota, Hiroyuki Morita, Yukinori Ohdaira, Keisuke Tokumitsu, Eisuke
Published in
Japanese Journal of Applied Physics
Effects of catalytically generated atomic hydrogen (Cat-H) treatment on electrical properties of 10 nm thick sputtered hafnium-zirconium-oxide (HZO) films have been investigated. It is demonstrated that the Cat-H treatment to the as-deposited sputtered HZO film is effective to stabilize the metastable ferroelectric orthorhombic phase after crystall...
Mohit, Wen, Yuli Hara, Yuki Migita, Shinji Ota, Hiroyuki Morita, Yukinori Ohdaira, Keisuke Tokumitsu, Eisuke
Published in
Japanese Journal of Applied Physics
Effects of catalytically generated atomic hydrogen (Cat-H) treatment on electrical properties of 10 nm thick sputtered hafnium-zirconium-oxide (HZO) films have been investigated. It is demonstrated that the Cat-H treatment to the as-deposited sputtered HZO film is effective to stabilize the metastable ferroelectric orthorhombic phase after crystall...
yang;, ziqi
BiFeO3–BaTiO3 (BF–BT) ceramics exhibit great potential for diverse applications in high temperature piezoelectric transducers, temperature-stable dielectrics and pulsed-power capacitors. Further optimization of functional properties for different types of applications can be achieved by modification of processing parameters or chemical composition....
lee;, yoseop
Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very promising because of their high remanent polarization (below 10 nm) and high compatibility with comple...
Pal, Subhajit Sarath, N V Priya, K Shanmuga Murugavel, P
Published in
Journal of Physics D: Applied Physics
Ferroelectric (FE) materials, which are non-centrosymmetric crystal systems with switchable polarization characterization, are known to show multifunctional application potential in various fields. Among them, the FE photovoltaic (PV) phenomenon, which has been known for several decades, is finding renewed interest recently due to its anomalous PV ...
jang;, chan-hee
In this study, we evaluated the temperature- and frequency-dependent ferroelectric characteristics of TiN/undoped HfO2/TiN metal-ferroelectric-metal (MFM) capacitors in which an undoped HfO2 film was deposited through atomic layer deposition (ALD). Successful ferroelectric characteristics were achieved after postdeposition annealing at 650 °C, whic...
Sil, Monali Nawaz, Sk Masum Mallik, Abhijit
Published in
Semiconductor Science and Technology
This paper reports a thorough investigation of the impacts of a spacer dielectric on the performance of HfO2-ferroelectric-based negative capacitance (NC)-FinFETs for 10 nm technology (gate length 22 nm) as per International Roadmap for Devices and Systems with in comparison with similarly-sized conventional FinFETs by means of an industry standard...
