Chen, Bing Li, Suzhi Zong, Hongxiang Ding, Xiangdong Sun, Jun Ma, Evan
Published in
Proceedings of the National Academy of Sciences of the United States of America
Atomistic simulations of dislocation mobility reveal that body-centered cubic (BCC) high-entropy alloys (HEAs) are distinctly different from traditional BCC metals. HEAs are concentrated solutions in which composition fluctuation is almost inevitable. The resultant inhomogeneities, while locally promoting kink nucleation on screw dislocations, trap...
Li, Y. Robertson, C.
International audience
Wei, YuJie Peng, ShenYou
Published in
Science China Physics, Mechanics & Astronomy
The dependence of dislocation mobility on stress is the fundamental ingredient for the deformation in crystalline materials. Strength and ductility, the two most important properties characterizing mechanical behavior of crystalline metals, are in general governed by dislocation motion. Recording the position of a moving dislocation in a short time...
Fei, Hongzhan Yamazaki, Daisuke Sakurai, Moe Miyajima, Nobuyoshi Ohfuji, Hiroaki Katsura, Tomoo Yamamoto, Takafumi
Published in
Science advances
An open question for solid-earth scientists is the amount of water in Earth's interior. The uppermost mantle and lower mantle contain little water because their dominant minerals, olivine and bridgmanite, have limited water storage capacity. In contrast, the mantle transition zone (MTZ) at a depth of 410 to 660 km is considered to be a potential wa...
Liu, JQ Huang, J Gong, XJ Wang, JF Xu, K Qiu, YX Cai, DM Zhou, TF Ren, GQ Yang, H
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GaN nanowire (NW) arrays have been fabricated by the electrodeless photoelectrochemical (PEC) etching method for the first time. Under appropriate conditions, the etching process is just a dislocation-hunted process, in which the etching solution "digs down'' along the threading dislocations, resulting in the formation of GaN NWs by preferentially ...
wei, m wang, xl pan, x xiao, hl wang, cm yang, cb wang, zg
Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed f...
jf, he wang, hl shang, xj mf, li zhu, y wang, lj yu, y hq, ni yq, xu niu, zc
...
Molecular beam epitaxy growth of GaAs-based long-wavelength metamorphic InAs/InGaAs quantum dots (QDs) is investigated. With optimized multi-step-graded InGaAs metamorphic buffer layers and growth conditions, room temperature 1.46 mu m emission from InAs/In(0.15)Ga(0.85)As QDs is realized, and broad-area laser diodes are fabricated with a very low ...
hu, q wei, tb duan, rf yang, jk huo, zq tc, lu zeng, yp univ, hu q r sichuan
Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not onl...
zhao, dg jiang, ds zhu, jj liu, zs wang, h zhang, sm wang, yt yang, h chinese, dg r zhao
A close relationship is found between the blue and yellow luminescence bands in n-type GaN films, which are grown without intentional acceptor doping. The intensity ratio of blue luminescence to yellow luminescence (I-BL/I-YL) decreases with the increase in edge dislocation densities as demonstrated by the (102) full width at half maximum of x-ray ...
xq, xu liu, xl yang, sy liu, jm wei, hy zhu, qs wang, zg acad, xu xq r chinese
A theory of scattering by charged dislocation lines in a quasitriangle potential well of AlxGa1-xN/GaN heterostructures is developed. The dependence of mobility on carrier sheet density and dislocation density is obtained. The results are compared with those obtained from a perfect two-dimensional electron gas and the reason for discrepancy is give...
