In the present work, we use a numerical modelling approach based on 2.5-dimensional dislocation dynamics simulations to investigate the transition between the power and the exponential laws in olivine for temperatures ranging between 800 K and 1700 K and stresses between 100 and 500 MPa. We model the deformation of an olivine crystal by the interpl...
Published in Geophysical research letters
Recent tomographic imaging of the mantle below major hot spots shows slow seismic velocities extending down to the core-mantle boundary, confirming the existence of mantle plumes. However, these plumes are much thicker than previously thought. Using new laboratory experiments and scaling laws, we show that thermal plumes developing in a visco-plast...
Published in Sintering: From Empirical Observations to Scientific Principles
Published in Sintering: From Empirical Observations to Scientific Principles
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In this paper, dislocation climb is incorporated in a two-dimensional discrete dislocation dynamics model. Calculations are carried out for polycrystalline thin films, passivated on one or both surfaces. Climb allows dislocations to escape from dislocation pile-ups and reduces the strain-hardening rate, especially for fully passivated films. Within...
Published in Transactions of the Indian Institute of Metals
The Brittle-to-ductile-transition-temperature (BDTT) of free-standing Pt-aluminide (PtAl) coating specimens, i.e. stand-alone coating specimens without any substrate, was determined by micro-tensile testing technique. The effect of Pt content, expressed in terms of the thickness of initial electro-deposited Pt layer, on the BDTT of the coating has ...
GaN nanowire (NW) arrays have been fabricated by the electrodeless photoelectrochemical (PEC) etching method for the first time. Under appropriate conditions, the etching process is just a dislocation-hunted process, in which the etching solution "digs down'' along the threading dislocations, resulting in the formation of GaN NWs by preferentially ...
Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed f...
Dislocation climb mobilities, assuming vacancy bulk diffusion, are derived and implemented in dislocation dynamics simulations to study the coarsening of vacancy prismatic loops in fcc metals. When loops cannot glide, the comparison of the simulations with a coarsening model based on the line tension approximation shows a good agreement. Dislocatio...
