Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN
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A high-power tapered and cascaded active multimode interferometer semiconductor laser diode
A high power semiconductor laser diode with a tapered and cascaded active multimode interferometer(MMI) cavity was designed and demonstrated. An output power as high as32 mW was obtained for the novel laser diode with a tapered and cascaded active MMI cavity, being much higher than the9.8 mW output power of the conventional single ridge F- P laser ...
Photonic integrated technology for multi-wavelength laser emission
We summarized the design, fabrication challenges and important technologies for multi-wavelength laser transmitting photonic integration. Technologies discussed include multi-wavelength laser arrays, monolithic integration and modularizing coupling and packaging. Fabrication technique requirements have significantly declined with the rise of recons...
Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed f...
Schottky barrier light emitting diode in standard CMOS technology
Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from673nm to785nm.?2011 IEEE.
Thermal characteristic of GaAs-based laser diodes
In order to analyze the thermal characteristic of GaAs-based laser diodes during degradation, aging tests were carried out under the conditions of the constant current stress for808 nm GaAs-based laser diodes. The temperature of active layer and the thermal resistance were investigated by using electrical method. It was found that the temperature o...
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert l...
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Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes(LEDs), the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared.6.8% Al composition in the stacks showed the highest electrostatic discharge(ESD) endurance ability a...
Frequency drift and instantaneous linewidth broadening of phase-section tuned SG-DBR laser
