Solar electricity can be used to cheaply cook food and charge electronic devices. We investigate the viability of using diodes as heating elements for insulated solar electric cooking (ISEC). In addition, information on designing and constructing ISEC compatible phone chargers and rechargeable LED lighting systems is included.
In this letter, we report a large-area latera lAlGaN/GaN-on-Si power rectifier as diode with low turn-on voltage. The lateral field-effect rectifier (LFER) is based on a normally-off HEMT in reverse conduction with very low threshold-voltage and shorted gate-source terminal. A p-GaN gate module was used to realize the normally-off HEMT. The large-a...
Published in Semiconductors
AbstractA comparison of the features of electron transport in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a similar design is performed. However, the number of periods and diode areas are different. The values of the parasitic resistances of the near-contact diode regions are correlated, and the specific voltage d...
Tato práce se zabývá návrhem a realizací systému pro měření statických charakteristik polovodičových součástek. K měření je využit vývojový kit NUCLEO osazený mikrokontrolérem z řady STM32, který má za úkol provádět měření a odesílat změřené hodnoty nadřazenému PC. Aplikace na nadřazeném PC řídí měření a prezentuje jeho výsledky v grafické podobě. ...
La micro-électronique est un domaine exigeant, en constante évolution, motivé par le secteur applicatif et les besoins des utilisateurs. La réalisation de jonctions ultra-minces et fortement dopées est un enjeu majeur pour la poursuite de son évolution, et notamment pour son composant de base, le transistor MOS. Dans ce contexte, de nouvelles techn...
Published in Medical physics
The goal of this work is to provide a large and consistent set of data for detector-specific output correction factors, k Q clin , Q ref f clin , f ref , for small static fields for seven solid-state detectors and to determine field output factors, Ω Q clin , Q ref f clin , f ref , using EBT3 radiochromic films and W1 plastic scintillator as refere...
Published in Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
The problems of the radiation resistance of diodes for different purposes, created on the basis of lightly doped epitaxial n-4H-SiC layers with Schottky barriers and ion-doped p‒n- and n‒p junctions, are considered. The effect of irradiation with high-energy particles in a wide range of energies and masses—from electrons to Bi heavy ions—on the ele...
Published in Advanced materials (Deerfield Beach, Fla.)
Despite many decades of research of diodes, which are fundamental components of electronic and photoelectronic devices with p-n or Schottky junctions using bulk or 2D materials, stereotyped architectures and complex technological processing (doping and multiple material operations) have limited future development. Here, a novel rectification device...
Published in Medical physics
Purpose The purpose of this study was to acquire beam data for an MR-linac, with and without a 1.5 T magnetic field, by using a variety of commercially available detectors to assess their relative response in the magnetic field. The impact of the magnetic field on the measured dose distribution was also assessed. Methods An MR-safe 3D scanning wate...
