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A practical route towards fabricating GaN nanowire arrays

GaN nanowire (NW) arrays have been fabricated by the electrodeless photoelectrochemical (PEC) etching method for the first time. Under appropriate conditions, the etching process is just a dislocation-hunted process, in which the etching solution "digs down'' along the threading dislocations, resulting in the formation of GaN NWs by preferentially ...

High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD

Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates

Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed f...

Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy

Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique

High-quality and thick Ge epitaxial films are grown on Si substrates utilizing the low-temperature(LT) buffer technique by ultrahigh vacuum chemical vapor deposition(UHV-CVD) and are characterized by atomic force microscope, X-ray diffraction, and Raman spectroscopy. The results show that the LT Ge buffer is rough due to the three-dimensional islan...

GaN grown with InGaN as a weakly bonded layer

UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation

Ge/SiGe multiple quantum wells(MQWs) are grown on silicon substrates using ultra-high vacuum chemical vapor deposition(UHVCVD) technique. The quantum-confined Stark effect(QCSE) is clearly observed in our MQWs structure.?2011 IEEE.

Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

Optimization of double nanocrystalline silicon p-layers for amorphous silicon solar cells

The plasma enhanced chemical vapor deposition(PECVD) system was used for fabricating the silicon films with different hydrogen dilution ratio(RH) under the high power density, high pressure and low substrate temperature. High-resolution transmission electron microscopy(HRTEM) and Raman spectroscopy indicated that the thin films were nanocrystalline...