Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-d...
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopoten...
Native p-type transparent conductive CuI via intrinsic defects
The ability of CuI to be doped p-type via the introduction of native defects has been investigated using first-principles pseudopotential calculations based on density functional theory. The Cu vacancy has a lower formation energy than any of the other native defects, which include I vacancy (V(I)), Cu interstitial (Cu(i)), I interstitial (I(i)), C...
Hole mediated magnetism in Mn-doped GaN nanowires
Magnetic and electronic structure properties of Co-doped SnO2 nanoparticles synthesized by the sol-gel-hydrothermal tech...
The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys
Magnetic coupling properties of Mn-doped AlN nanowires: First-principles calculations
Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn
Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain
The growth and characterization of high-quality ultrathin Fe(3)O(4) films on semiconductor substrates is a key step for spintronic devices. A stable, single-crystalline ultrathin Fe(3)O(4) film on GaAs(001) substrate is obtained by post-growth annealing of epitaxial Fe film with thicknesses of 5 and 12 nm in air. Raman spectroscopy shows a high abi...
Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling
...
Scanning capacitance microscopy(SCM) and scanning spreading resistance microscopy(SSRM) both are capable of mapping the2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM1,2 is used to study the InGaAs/InP P-i-N j...
