Chen, Li Zhang, Gengyuan Xu, Baofeng Guo, Jianwei
Published in
Green Processing and Synthesis
Cellulose-based aerogels have become promising adsorbents for organic pollutants and spilled oil due to their high selectivity and excellent sorption capacity. However, the high costs of preparation limit their practicality. In this study, cellulose fibers were fabricated from corn straw via simple alkaline pulping and bleaching. A cellulose aeroge...
Lin, Der-Yuh Shih, Yu-Tai Qiu, De-Jin Kao, Yee-Mou Hwang, Sheng-Beng Kao, Ming-Cheng Lin, Chia-Feng
Published in
Journal of Physics D: Applied Physics
A facile, cost-effective, and scalable chemical vapor deposition technique was used to synthesize p-type Cu2Se thin films on glass and n-type Si substrates. Thorough characterization confirmed the films’ β-phase structure with the correct stoichiometric ratio and exceptional crystalline quality, exhibiting behavior akin to a degenerate semiconducto...
Tchoffo, D B Talonpa Benabdallah, I Aberda, A Neugebauer, P Belhboub, A El Fatimy, A
Published in
Journal of Physics D: Applied Physics
Addressing the main challenges of defect-free, large-scale synthesis of low-dimensional materials composed of phosphorus atoms is essential for advancing promising phosphorene-based technologies. Using molecular dynamics simulation, we demonstrate the large-scale and defect-free synthesis of phosphorene on Nickel (Ni) substrates. We showed that sub...
Chi, Ping-Feng Chuang, Yung-Lan Yu, Zide Zhang, Jing-Wen Wang, Jing-Jie Lee, Ming-Lun Sheu, Jinn-Kong
Published in
Nanotechnology
This study employs cold-wall chemical vapor deposition to achieve the growth of MoTe2 thin films on 4-inch sapphire substrates. A two-step growth process is utilized, incorporating MoO3 and Te powder sources under low-pressure conditions to synthesize MoTe2. The resultant MoTe2 thin films exhibit a dominant 1T′ phase, as evidenced by a prominent Ra...
Loginov, A B Kuvatov, M M Ismagilov, R R Sapkov, I V Fedotov, P V Kleshch, V I Obraztsova, E D Obraztsov, A N
Published in
Nanotechnology
Unique properties possessed by transition metal dichalcogenides (TMDs) attract much attention in terms of investigation of their formation and dependence of their characteristics on the production process parameters. Here, we investigate the formation of TMD films during chemical vapor deposition (CVD) in a mixture of thermally activated gaseous H2...
Cao, Yupeng Cao, Aiping Li, Shubing Tang, Jianli Hu, Rui Shang, Liyan Li, Yawei Jiang, Kai Zhang, Jinzhong Zhu, Liangqing
...
Published in
Nanotechnology
The type-II Weyl semimetal Td-WTe2 is one of the wonder materials for high-performance optoelectronic devices. We report the self-powered Td-WTe2 photodetectors and their bias-dependent photoresponse in the visible region (405, 520, 638 nm) driven by the bulk photovoltaic effect. The device shows the responsivity of 15.8 mAW−1 and detectivity of 5....
Zhu, Yulin Shi, Zhiyuan Ruan, Yinjie Yu, Qingkai
Published in
2D Materials
High-quality two-dimensional hexagonal boron nitride (h-BN) film with tens of layers has been used as a universal substrate and capping layer for the van der Waals devices. Various approaches have been carried out for the synthesis of multilayered h-BN. Among them, the metal flux method is reliable in yielding h-BN crystals with high crystalline qu...
Akbari, Masoud Mouharrar, Hamza Crivello, Chiara Defoort, Martial Abdel-Rahman, Eihab Basrour, Skandar Musselman, Kevin Munoz-Rojas, David
A gas-phase technique, known as chemical vapor deposition of metal-organic frameworks (MOF-CVD), is used for sensitizing silicon cantilevers. These cantilevers are coated with a uniform and compact Zn(EtIm)2 (MAF-6) film, enabling the detection of volatile organic compounds (VOCs) through a change in the resonance frequency of the cantilever. The M...
Dai, Lei Hao, Jinggang Cui, Mei Zhang, Yanfang Kuang, Yue Wang, Zhengpeng Ren, Fang-Fang Gu, Shulin Ye, Jiandong
Published in
Journal of Physics D: Applied Physics
Unintentionally doped carbon impurities from organometallic precursors are primary sources of carrier compensation and mobility degradation in wide bandgap semiconductors, leading to lowered performance of power electronic devices. To address this challenge, carbon-free α-Ga2O3 single-crystalline thin films were heteroepitaxially grown on sapphire ...
Toyoda, Gento Fuse, Takashi Yamauchi, Satoshi
Published in
Japanese Journal of Applied Physics
Selective Cu deposition by CVD using copper(I)-iodide (CuI) as the precursor is applied on 0.5 μm- and 1.0 μm-pitch Cu-lines/SiO2 -spaces (L/S) at 370 °C. A confocal laser microscope suggests that the Cu is selectively deposited on the Cu line, not on the space. The average Cu height provided by the cross-sectional profile across the 1.0 μm-pitch L...
