Published in Nanotechnology
Low-dimensional tin selenide nanoribbons (SnSe NRs) show a wide range of applications in optoelectronics fields such as optical switches, photodetectors, and photovoltaic devices due to the suitable band gap, strong light–matter interaction, and high carrier mobility. However, it is still challenging to grow high-quality SnSe NRs for high-performan...
Published in Japanese Journal of Applied Physics
Semiconducting iron disilicide (β-FeSi2) films were epitaxially grown on the Ag-layer pre-coated Si(111) substrates with an initial β-FeSi2 layer by the metal–organic chemical vapor deposition method. These β-FeSi2 films had (101)-preferred orientations, and their crystal quality was improved as the growth temperature increased from 893 to 1093 K. ...
Published in Applied Physics Express
We develop a high-temperature chemical vapor deposition of highly crystalline graphene on the surface of boron nitride nanotubes (BNNTs). The growth of few-layer graphene flakes on BNNT templates was confirmed by scanning transmission electron microscopy. Based on an investigation of the effect of growth temperature and growth time on defect densit...
Published in Nanotechnology
Multilayer borophene was predicted to have a similar semiconductor property to its monolayer arise from the weak van der Waals interactions between the layers. Besides, multilayer borophene has a higher carrier mobility than monolayer ones, so it is placed great hopes in applications of photoelectric and photovoltaic devices. However, its preparati...
Published in Japanese Journal of Applied Physics
Heteroepitxy of group IV materials (Si, SiGe, and Ge) has great potential for boosting Si-based novel device performance because of the possibility for strain, band gap/Fermi-level engineering, and applying emerging artificial materials such as a superlattice (SL) and nanodots. In order to control group IV heteroepitaxy processes, strain, interface...
Published in Japanese Journal of Applied Physics
Self-ordered multilayered Ge nanodots with SiGe spacers on a Si0.4Ge0.6 virtual substrate are fabricated using reduced-pressure chemical vapor deposition, and the mechanism of vertical ordering is investigated. The process conditions of Ge and SiGe layer deposition are H2-GeH4 at 550 °C and H2-SiH4-GeH4 at 500 °C–550 °C, respectively. By depositing...
Published in Materials Research Express
C/SiBCN composites are expected to be widely used in aerospace applications because of their excellent high-temperature stability. However, the interfacial reactions have significantly limited their practical application. A pyrocarbon (PyC) interphase can improve the interfacial reactions of C/SiBCN composites. In this study, PyC interphases of dif...
Published in ECS Journal of Solid State Science and Technology
A method for high quality epitaxial growth of Ge on Si (111) and Si (110) is investigated by reduced pressure chemical vapor deposition. Two step Ge epitaxy (low temperature Ge seed and high temperature main Ge growth) with several cycles of annealing by interrupting the Ge growth (cyclic annealing) is performed. In the case of Ge seed layer growth...
Published in Nanotechnology
Niobium dioxide (NbO2) exhibits metal-insulator transition (Mott transition) and shows the potential for application in memristors and neuromorphic devices. Presently growth of NbO2 thin films requires high-temperature reduction of Nb2O5 films using H2 or sophisticated techniques such as molecular beam epitaxy and pulsed laser deposition. The prese...
Published in Nanotechnology
The performance of supercapacitors strongly depends on the electrochemical characterizations of electrode materials. Herein, a composite material consisted of polypyrrole (PPy) and multilayer graphene-wrapped copper nanoparticles (PPy/MLG-Cu NPs) is fabricated on a flexible carbon cloth (CC) substrate via two-step synthesis process for supercapacit...
