Picot-Digoix, Mathis Richardeau, Frédéric Blaquière, Jean-Marc Sébastien, Vinnac Le, Thanh Long Azzopardi, Stéphane
En peu de temps, le transistor de puissance SiC a surpassé le Si dans les applications exigeant efficacité énergétique et haute fréquence de découpage. Cet article présente une architecture de commande électronique novatrice pour assurer la sécurité et surveiller la santé du transistor. Elle repose sur des résistances de grille commutées en parallè...
Madi Halidi, Madi
Concentrated Solar Thermodynamic Power (CSTP) technologies are among the most promising technologies for energy transition. Among these, Tower Solar Power Plants (TSPPs) are thoses that could guarantee a high electricity production despite periods without sun. This thanks to their thermal energy storage module. In addition, new research line is gro...
Barbé, Jérémy
En raison de leurs propriétés nouvelles, les matériaux composites à base de nanocristaux de silicium (nc-Si) contenus dans des matrices siliciées amorphes suscitent un intérêt grandissant pour les nombreuses applications envisagées dans les domaines de l'électronique et du photovoltaïque. La fabrication de ces nanostructures est parfaitement compat...
Guido, Roma
This document is conceived as an overview of my research work on defects stability and kinetics in two materials of interest in nuclear science and for many other application domains : silicon dioxide and silicon carbide. The preliminary chapter (page ix) is an extended summary in french of chapters 1,2,3,4, followed by a four years project playing...
sun, gs liu, xf hl, wu yan, gg dong, l zheng, l zhao, ws wang, l zeng, yp xg, li
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song, c rui, yj wang, qb xu, j li, w chen, kj zuo, yh wang, qm
Wu, Hailei Sun, Guosheng Yang, Ting Yan, Guoguo Wang, Lei Zhao, Wanshun Liu, Xingfang Zeng, Yiping Wen, Jialiang Wu, H.([email protected])
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A P-layer can be formed on a SiC wafer surface by using multiple Al ion implantations and post-implantation annealing in a low pressure CVD reactor. The Al depth profile was almost box shaped with a height of1×1019cm-3 and a depth of550 nm. Three different annealing processes were developed to protect the wafer surface. Variations in RMS roughness ...
Zhang, Feng Sun, Guosheng Huang, Huolin Wu, Zhengyun Wang, Lei Zhao, Wanshun Liu, Xingfang Yan, Guoguo Zheng, Liu Dong, Lin
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4H-SiC-based metal-insulator-semiconductor(MIS) ultraviolet(UV) photodetectors with thermally grown SiO2 and evaporated Al2}O3SiO}2(A/S) films are fabricated and demonstrated as normally-off and normally-on mode devices, respectively. Ultralow dark currents of3.25\times10}-10 and9.75\times10-9}\ A/cm}2 and high UV-to-visible rejection ratios of2}\t...
Yan, Guoguo Sun, Guosheng Wu, Hailei Wang, Lei Zhao, Wanshun Liu, Xingfang Zeng, Yiping Wen, Jialiang Yan, G.([email protected])
We report the latest results of the3C-SiC layer growth on Si(100) substrates by employing a novel home-made horizontal hot wall low pressure chemical vapour deposition(HWLPCVD) system with a rotating susceptor that was designed to support up to three50 mm-diameter wafers.3C-SiC film properties of the intra-wafer and the wafer-to-wafer, including cr...
Beurotte, Arnaud Boussuge, Michel Jeanfaivre, Laurent Gailliègue, Sylvain
Les structures nid d'abeilles en céramique, qui constituent les filtres à particules (FAP) utilisés dans les véhicules particuliers, sont soumises à de forts gradients thermiques lors de la phase de combustion des suies, dite de régénération. Des gradients trop élevés peuvent conduire à une fissuration du filtre, nuisible à son efficacité. L'essai ...