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Atomic-Level Electronic Properties of Carbon Nitride Monolayers.

Published in ACS nano

Heteroatom-doped carbon-based materials are of significance for clean energy conversion and storage because of their fascinating electronic properties, low cost, high durability, and environmental friendliness. Atomically precise fabrication of carbon-based materials with well-defined heteroatom-dopant positions and atomic-scale understanding of th...

Band alignment at interfaces of two-dimensional materials: internal photoemission analysis

The article overviews experimental results obtained by applying internal photoemission (IPE) spectroscopy methods to characterize electron states in single- or few-monolayer thick two-dimensional materials and at their interfaces. Several conducting (graphene) and semiconducting (transitional metal dichalcogenides MoS2, WS2, MoSe2, and WSe2) films ...

Experimental and Theoretical Study into Interface Structure and Band Alignment of the Cu 2Zn 1– x Cd x SnS 4 Heterointer...

Published in ACS Applied Energy Materials

To improve the constraints of kesterite Cu2ZnSnS4 (CZTS) solar cell, such as undesirable band alignment at p–n interfaces, bandgap tuning, and fast carrier recombination, cadmium (Cd) is introduced into CZTS nanocrystals forming Cu2Zn1– x Cd x SnS4 through cost-effective solution-based method without postannealing or sulfurization treatments. A syn...

Energy Band Alignment of Few-Monolayer WS(2)and WSe(2)with SiO(2)Using Internal Photoemission Spectroscopy

status: published

Band-Offset Analysis of Atomic Layer Deposition La2O3 on GaAs(111), (110), and (100) Surfaces for Epitaxial Growth.

Published in ACS applied materials & interfaces

In this paper, we measured band offsets for La2O3 prepared by atomic layer deposition on GaAs(111), (110), and (100) surfaces. La2O3 grows epitaxially on GaAs(111) with very low interfacial defect density and exhibits a band offset that is predicted for defect-free interfaces by the metal-induced gap state theory. On the other hand, the polycrystal...

Synthesis of anisotropic CdSe/CdS dot-in-giant-rod nanocrystals with persistent blue-shifted biexciton emission

Anisotropic single-phase wurtzite CdSe/CdS nanocrystals were synthesized by colloidal chemistry, introducing ZnCl2 to increase the shell growth in the radial direction. As a result, dot-in-giant-rod nanocrystals were obtained, with a core diameter that varied between 3.2 and 7.5 nm and an overall diameter between 15 and 22 nm, corresponding to a 14...

Transport Across Heterointerfaces of Amorphous Niobium Oxide and Crystallographically Oriented Epitaxial Germanium.

Published in ACS applied materials & interfaces

Because of the high carrier mobility of germanium (Ge) and high dielectric permittivity of amorphous niobium pentoxide (a-Nb2O5), Ge/a-Nb2O5 heterostructures offer several advantages for the rapidly developing field of oxide-semiconductor-based multifunctional devices. To this end, we investigate the growth, structural, band alignment, and metal-in...

Band Alignment Engineering at Cu2O/ZnO Heterointerfaces.

Published in ACS applied materials & interfaces

Energy band alignments at heterointerfaces play a crucial role in defining the functionality of semiconductor devices, yet the search for material combinations with suitable band alignments remains a challenge for numerous applications. In this work, we demonstrate how changes in deposition conditions can dramatically influence the functional prope...