The goal of this stydy was to explore the potential of the enhanced corrosion resistance of Ti(N,O) cathodic arc evaporation-coated 304L stainless steel using oxide nano-layers deposited by atomic layer deposition (ALD). In this study, we deposited Al2O3, ZrO2, and HfO2 nanolayers of two different thicknesses by ALD onto Ti(N,O)-coated 304L stainle...
Amorphous Al2O3-Y2O3:Er nanolaminate films are fabricated on silicon by atomic layer deposition, and ~1530 nm electroluminescence (EL) is obtained from the metal-oxide-semiconductor light-emitting devices based on these nanofilms. The introduction of Y2O3 into Al2O3 reduces the electric field for Er excitation and the EL performance is significantl...
Recent progress in the fabrication of controlled structures and advanced materials has improved battery performance in terms of specific capacity, rate capability, and cycling stability. However, interfacial problems such as increased resistance and contact instability between the electrodes and solid/liquid electrolytes still put pressure on the c...
The membranes used in bone reconstructions have been the object of investigation in the field of tissue engineering, seeking to improve their mechanical strength and add other properties, mainly the osteopromotive. This study aimed to evaluate the functionalization of collagen membranes, with atomic layer deposition of TiO2 on the bone repair of cr...
Published in Nanotechnology
Ferroelectric field effect transistor (FeFET) memories with hafnium zirconium oxide (HZO) ferroelectric gate dielectric and ultrathin InO x channel exhibit promising applicability in monolithic three-dimensional (M3D) integrated chips. However, the inferior stability of the devices severely limits their applications. In this work, we studied the ef...
Published in Nanotechnology
Sensitive detection of nucleolin (NCL) is of great significance for the early diagnosis of cancer. In this work, as a new type of two-dimensional (2D) transition metal dichalcogenides (TMDCs), TaS2 nanoflakes (NFs) were precisely constructed by atomic layer deposition (ALD) on carbon fiber paper (CFP) with high specific surface area. In situ observ...
Published in Japanese Journal of Applied Physics
The SiO2 layer fabricated by the atomic layer deposition (ALD) method was applied to control the efficiency of the fluorescence quenching by graphene oxide (GO) in supported lipid bilayers (SLBs). SLB was formed by the vesicle fusion method on the ALD-SiO2 layer on GO deposited on thermally oxidized SiO2/Si substrates. Wide-field fluorescence obser...
This study demonstrates the low-temperature (
Published in Journal of Physics D: Applied Physics
The combined effects of the atomic-layer-deposition (ALD) temperature (220 °C–280 °C) and metal electrodes (TiN and Mo) on the ferroelectric properties of Hf0.5Zr0.5O2 films were studied. Regardless of the metal electrode, a tetragonal–orthorhombic–monoclinic phase evolution sequence was observed with increasing ALD temperature after post-metalliza...
Published in Semiconductor Science and Technology
The chemical, physical and electrical properties and the robustness of post metallization annealed Al2O3 atomic layers deposited on n-type GaN are investigated in this work. Planar metal insulator capacitors are used to demonstrate a gate-first with following ohmic contacts formation at elevated temperature up to 600 °C process flow. X-ray photoele...
