Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
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The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
Wurtzite to zincblende transition of InN films on(011) SrTiO3 by decreasing trimethylindium flows
Wurtzite(w) and zincblende(zb) InN films have been grown on(011) SrTiO3(STO) substrates by metal-organic chemical vapor deposition, the epitaxial relationships and optical properties are characterized by X-ray diffraction(XRD), absorption and photoluminescence(PL). Based on XRDθ-2θ andΦ scanning results, the epitaxial relationships between(w- and z...
Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers
Using spatially resolved cathodoluminescence spectroscopy, we investigate the spatial luminescence distribution in a fully strained (In,Ga)N layer, in particular, its correlation with the distribution of threading dislocations (TDs). Regarding the impact of TDs on the luminescence properties, we can clearly distinguish between pure edge-type TDs an...
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
The evolution of strain and structural properties of thick epitaxial InGaN layers grown on GaN with different thicknesses are investigated. It is found that, with increase in InGaN thickness, plastic relaxation via misfit dislocation generation becomes a more important strain relaxation mechanism. Accompanied with the relaxation of compressive stra...
Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser
Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negat...
In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy
The interface properties of GaNxAs1-x/GaAs single-quantum well is investigated at 80 K by reflectance difference spectroscopy. Strong in-plane optical anisotropies (IPOA) are observed. Numerical calculations based on a 4 band K . P Hamiltonian are performed to analyze the origin of the optical anisotropy. It is found that the IPOA can be mainly att...
