Abstract The possibility of varying beer formulations is acquired by variations in beverage production and the usage of different ingredients such as wheat, rice, corn, rye, cassava, honey, fruits, and others. Consequently, this work aimed to develop artisanal beers adding rice flakes and soursop pulp as adjuncts. Four artisanal beer formulations w...
Abstract The possibility of varying beer formulations is acquired by variations in beverage production and the usage of different ingredients such as wheat, rice, corn, rye, cassava, honey, fruits, and others. Consequently, this work aimed to develop artisanal beers adding rice flakes and soursop pulp as adjuncts. Four artisanal beer formulations w...
Published in Journal of applied microbiology
Brewing yeasts are classified into two species-Saccharomyces pastorianus and Saccharomyces cerevisiae. Most of the brewing yeast strains are natural interspecies hybrids typically polyploids and their identification is thus often difficult giving heterogenous results according to the method used. We performed genetic characterization of a set of th...
Föreliggande studie syftar till att kartlägga vilka designfaktorer som främst förekommer på etiketter hos framgångsrika aleproducenter från olika länder, samt undersöka om konsumenter kan urskilja produktionsland endast genom granskning av etiketten. För att undersöka detta genomfördes en visuell innehållsanalys för att ta fram designfaktorer för f...
GaN nanowire (NW) arrays have been fabricated by the electrodeless photoelectrochemical (PEC) etching method for the first time. Under appropriate conditions, the etching process is just a dislocation-hunted process, in which the etching solution "digs down'' along the threading dislocations, resulting in the formation of GaN NWs by preferentially ...
We investigate the band structure of a compressively strained In(Ga)As/In(0.53)Ga(0.47)As quantum well (QW) on an InP substrate using the eight-band k.p theory. Aiming at the emission wavelength around 2.33 mu m, we discuss the influences of temperature, strain and well width on the band structure and on the emission wavelength of the QW. The wavel...
The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy(MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum...
Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer between GaN epilayer and high temperature AlN buffer on 2-in Si(111) substrates by metal organic chemical vapor deposition. This paper investigated the influence of AlGaN buffer thickness on the structural properties of the GaN epilayer. It was confirmed f...
