Published in Nano Letters
Existing barriers to efficient deep ultraviolet (UV) light-emitting diodes (LEDs) may be reduced or overcome by moving away from conventional planar growth and toward three-dimensional nanostructuring. Nanorods have the potential for enhanced doping, reduced dislocation densities, improved light extraction efficiency, and quantum wells free from th...
Published in Sensors (Basel, Switzerland)
Sulfur dioxide (SO2) is a key indicator for fault diagnosis in sulfur hexafluoride (SF6) gas-insulated equipment. In this work, an in situ photoacoustic detection system using an ultraviolet (UV) LED light as the excitation source was established to detect SO2 in high-pressure SF6 buffer gas. The selection of the SO2 absorption band is discussed in...
Existing barriers to efficient deep ultraviolet (UV) light-emitting diodes (LEDs) may be reduced or overcome by moving away from conventional planar growth and toward three-dimensional nanostructuring. Nanorods have the potential for enhanced doping, reduced dislocation densities, improved light extraction efficiency, and quantum wells free from th...
Existing barriers to efficient deep ultraviolet (UV) light-emitting diodes (LEDs) may be reduced or overcome by moving away from conventional planar growth and toward three-dimensional nanostructuring. Nanorods have the potential for enhanced doping, reduced dislocation densities, improved light extraction efficiency, and quantum wells free from th...
We investigated the formation of ohmic contacts as a result of intermetallic phase formation between V, Al, Ni, and Au in V/Al/Ni/Au metal stacks on n-Al0.65Ga0.35N:Si. In particular, the influence of Au metal thickness and annealing temperature was analysed. The lowest annealing temperature of 750 °C for an ohmic contact with a smooth surface and ...
Published in Semiconductor Science and Technology
We investigated the formation of ohmic contacts as a result of intermetallic phase formation between V, Al, Ni, and Au in V/Al/Ni/Au metal stacks on n-Al0.65Ga0.35N:Si. In particular, the influence of Au metal thickness and annealing temperature was analysed. The lowest annealing temperature of 750 °C for an ohmic contact with a smooth surface and ...
Nowadays, the disinfection of classrooms, shopping malls, and offices has become an important part of our lives. One of the most effective disinfection methods is ultraviolet (UV) radiation. To ensure the disinfection device has the required wavelength spectrum, we need to measure it with dedicated equipment. Thus, in this work, we present the deve...
Published in Applied Physics Express
AlGaN-based deep ultraviolet (DUV) micro-light-emitting diodes (μLEDs) with emission wavelengths between 277 and 304 nm with mesa dimensions down to 20 μm were fabricated. Their size-dependent electrical and optical characteristics were analyzed. At 20 A cm−2, the external quantum efficiency (EQE) increased from 2.0% to 2.3% mainly due to the impro...
Published in Semiconductor Science and Technology
Increase of light extraction efficiency (LEE) and total output power of UV light emitting diodes (LEDs) emitting at 265 and 310 nm, respectively, after encapsulation with a UV-transparent silicone are studied. Raytracing simulations suggest that a properly placed hemispherical encapsulation with a refractive index in the range from 1.4 to 1.8 enhan...
Published in Applied Physics Express
We demonstrated the structural optimization of AlGaN tunnel junction (TJ) deep-ultraviolet light-emitting diodes by changing the thickness and impurity concentrations of p+-type and n+-type AlGaN constituting the TJ. By decreasing the total thickness of the TJ to 23 nm, the operating voltage reached a minimum of 8.8 V at 63 A cm−2. Further decrease...
