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Rahman, Md. Khalilur Licitra, Christophe Nemouchi, Fabrice
Published in
Oxidation of Metals
Although silicide oxidation was studied 20 years ago, the interest in obtaining a robust process for new applications remains significant today. Indeed, the new architectural development process requires dense and narrow spaces. In this study, attempts were made to bury a silicide layer under a protective silica layer in order to keep the physical ...
Legallais, M. Nguyen, T.T.T. Mouis, M. Salem, B. Robin, E. Chenevier, P. Ternon, C.
Since the early 2000s, silicon nanowire field effect transistors are emerging as ultrasensitive biosensors while offering label-free, portable and rapid detection. Nevertheless, their large scale production remains an ongoing challenge due to time consuming, complex and costly technology. In order to bypass these issues, we report here on the first...
RAVAL, MC JOSHI, AP SASEENDRAN, SS SUCKOW, S SARAVANAN, S SOLANKI, CS KOTTANTHARAYIL, A
In this study, the impact of impurities incorporated into plated nickel seed layer on silicide formation and the influence of annealing temperature on the fill-factor (FF) loss of solar cells with Ni-Cu contacts is investigated. The silicide growth of electro-less plated nickel seed layer is significantly retarded compared with literature data on p...
Li, Xiuyan Yajima, Takeaki Nishimura, Tomonori Nagashio, Kosuke Toriumi, Akira
Published in
Thin Solid Films
•SiO2 interface (SiO2-IL) in HfO2/SiO2/Si was reduced by high vacuum annealing.•SiO2-IL reduction occurred with a finite temperature window from silicidation.•SiO2-IL reduction was explained by oxygen transport through oxygen vacancies.•Silicidation process was associated with the inhomogeneous SiO desorption.
Urban, C. Sandow, C. Zhao, Q. T. Knoch, J. Lenk, S. Mantl, S.
In this paper. we present a detailed study of nickel-silicide source and drain Schottky barrier MOSFETs on thin-body silicon-on-insulator. We use silicidation induced dopant segregation to lower the effective Schottky barrier height of NiSi source/drain to channel contacts. p-Type Schottky barrier MOSFFTs with boron segregation and n-type Schottky ...
Murakami, Yuji 村上, 裕二 Yoshikado, Yutaka 吉門, 豊 Kenjo, Atsushi 権丈, 淳 Yoshitake, Tsuyoshi 吉武, 剛 Sadoh, Taizoh 佐道, 泰造
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Orientation dependent solid-phase growth of β-FeSi_2 thin films on (100), (110), and (111) Si substrates has been investigated by using a-Fe (thickness: 20 nm)/c-Si stacked structures. XRD measurements suggested that the substrate orientation dependence of the formation rate of β-FeSi_2 was as follows: (100) > (111) > (110). This dependence can be ...
