Takagi, Shigeyuki Nakaegawa, Tatsuhiro Hsiao, Shih-Nan Sekine, Makoto
Published in
Japanese Journal of Applied Physics
In a dual-frequency capacitively coupled Ar plasma, the secondary electron emission (SEE) coefficients were estimated using a 2D fluid model and experiments. The electron density was measured in the plasma chamber with the upper and lower electrodes of Si. The electron density was calculated by changing the SEE coefficient. The SEE coefficient of t...
Gou, Wenxian Li, Wei Siebecker, Matthew G Zhu, Mengqiang Li, Ling Sparks, Donald L
Published in
Environmental science & technology
While silicate has been known to affect metal sorption on mineral surfaces, the mechanisms remain poorly understood. We investigated the effects of silicate on Zn sorption onto Al oxide at pH 7.5 and elucidated the mechanisms using a combination of X-ray absorption fine structure (XAFS) spectroscopy, Zn stable isotope analysis, and scanning transmi...
Lambert, Damien Richard, Nicolas Raine, Mélanie Inguimbert, Christophe Duhamel, Olivier Marcandella, Claude Rostand, Neil Paillet, Philippe
The displacement damage cross-section of the neutron-GaN interaction is calculated. The differences with the neutron-Silicon interactions are presented and the impacts on the estimation of TNID levels are evaluated.
Tajima, Michio Fujimori, Hiroyuki Takeda, Ryuji Kawai, Naoyuki J. Ishihara, Noriyuki
Published in
Japanese Journal of Applied Physics
The procedure of Fourier transform infrared absorption (FT-IR) at room temperature for quantifying C impurities in Si crystals was reexamined to improve the detection limit down to 5 × 1014 cm−3. Since the substitutional C absorption peak overlaps with a strong two-phonon absorption, the difference spectroscopy is necessary with using a C-lean refe...
Hou, Yaonan Jia, Hui Tang, Mingchu Mosberg, Aleksander Buseth Ramasse, Quentin M Skandalos, Ilias Noori, Yasir Yang, Junjie Liu, Huiyun Seeds, Alwyn
...
Published in
Journal of Physics D: Applied Physics
We present a systematic study of the oxidation and deoxidation behaviours of several kinds of ultrathin silicon oxide layers frequently used in silicon (Si) technology, which in this work serve as surface protecting layers for molecular beam epitaxy (MBE). With various characterization techniques, we demonstrate that a chemically grown silicon oxid...
Tajima, Michio Toyota, Hiroyuki Ogura, Atsushi
Published in
Japanese Journal of Applied Physics
We review photoluminescence processes due to donor and acceptor impurities with concentrations ranging from 1 × 1010 to 1 × 1020 cm−3 in both uncompensated and compensated Si at 4.2 K for application to the impurity characterization. Systematic evolution and extinction were observed in the impurity bound exciton and impurity cluster bound exciton e...
Dang, Weiqi Lu, Zheyi Zhao, Bei Li, Bo Li, Jia Zhang, Hongmei Song, Rong Hossain, Mongur Le, Zhikai Liu, Yuan
...
Published in
Nanotechnology
The increase of gate leakage current when the gate dielectric layer is thinned is a key issue for device scalability. For scaling down the integrated circuits, a thin gate dielectric layer with a low leakage current is essential. Currently, changing the dielectric layer material or enhancing the surface contact between the gate dielectric and the c...
Seki, Toshio Yamamoto, Hiroki Koike, Kunihiko Aoki, Takaaki Matsuo, Jiro
Published in
Japanese Journal of Applied Physics
The reactive gas cluster injection process is an etching method that uses a neutral cluster beam without plasma. This process can avoid damage caused by energetic ion irradiation and vacuum UV light from the plasma. The characteristics of an etching by ClF3–Ar gas cluster injection were investigated at various target distances, pattern widths, and ...
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The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam...
Fukumoto, Shoya Matsumae, Takashi Kurashima, Yuichi Takagi, Hideki Hayase, Masanori Higurashi, Eiji
Published in
Japanese Journal of Applied Physics
GaN substrates were directly bonded with Si substrates by wet treatments using H2SO4/H2O2 and NH3/H2O2 mixtures. Under the optimized condition, the tensile strength reached 7.36 MPa, and a part of the Si substrate was fractured within the bulk instead of the bonding interface. There is an amorphous intermediate layer with a thickness of 1.7 nm, whi...
