Because of the thermal distribution of electrons in a semiconductor, modern transistors cannot be turned on more sharply than 60 mV of gate voltage for an order of magnitude increase in drain current, the so-called ”Boltzmann tyranny.” This results in an inability to reduce supply voltage, increasing power dissipation in advanced complementary meta...
Materials have always had a large impact on society over the different ages. Piezoelectric materials are the often ‘invisible’ materials which find widespread use, unknown to the general public by large. Mobile electronics, automotive systems, medical and industrial systems are few of the key areas where ‘piezoelectricity’ is indispensable. The par...
Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization. The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking do...
Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization. The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking do...
Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization. The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking do...
Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization. The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking do...
Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization. The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking do...
Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization. The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking do...
Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization. The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking do...
Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization. The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking do...
