Karthik, Kadava R. N. Pandey, Chandan Kumar
Published in
ECS Journal of Solid State Science and Technology
In this paper, a novel structure of gate-all-around vertical TFET (GAA-VTFET) is proposed and investigated for the first time with the help of 3D TCAD simulator. It is found that GAA-VTFET offers much improvement in various DC parameters like ION, IOFF, subthreshold swing (SSAVG), and turn-on voltage (VT) as compared with the conventional GAA-TFET....
Qwah, Kai Shek
In the field of semiconductor devices, the III-nitride material system, which is mainly made up of Indium Nitride (InN), Gallium Nitride (GaN) and Aluminum Nitride (AlN), has seen a great deal of attention over the past decade. Despite the maturity of this field of research, the growth mechanics and physics that govern the behavior of these devices...
Chatterjee, Korok
Because of the thermal distribution of electrons in a semiconductor, modern transistors cannot be turned on more sharply than 60 mV of gate voltage for an order of magnitude increase in drain current, the so-called ”Boltzmann tyranny.” This results in an inability to reduce supply voltage, increasing power dissipation in advanced complementary meta...
Pal, Joydeep
Materials have always had a large impact on society over the different ages. Piezoelectric materials are the often ‘invisible’ materials which find widespread use, unknown to the general public by large. Mobile electronics, automotive systems, medical and industrial systems are few of the key areas where ‘piezoelectricity’ is indispensable. The par...
Ganapathi, Kartik
Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization. The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking do...
Ganapathi, Kartik
Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization. The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking do...
Ganapathi, Kartik
Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization. The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking do...
Ganapathi, Kartik
Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization. The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking do...
Ganapathi, Kartik
Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization. The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking do...
Ganapathi, Kartik
Simulation of electronic transport in nanoscale devices plays a pivotal role in shedding light on underlying physics, and in guiding device-design and optimization. The length scale of the problem and the physical mechanism of device operation guide the choice of formalism. In the sub-20 nanometer regime, semi-classical approaches start breaking do...
