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Afanas'ev, Valery V; 2690; Delie, Gilles; 124585; Houssa, Michel; 31977; Shlyakhov, Ilya; 112604; Stesmans, Andre; 14266; Trepalin, Vadim; 117529;
The article overviews experimental results obtained by applying internal photoemission (IPE) spectroscopy methods to characterize electron states in single- or few-monolayer thick two-dimensional materials and at their interfaces. Several conducting (graphene) and semiconducting (transitional metal dichalcogenides MoS2, WS2, MoSe2, and WSe2) films ...
Sonde, S. Giannazzo, F. Raineri, V. Yakimova, R. Huntzinger, Jean-Roch Tiberj, Antoine Camassel, Jean
The current transport across the graphene/4H-SiC interface has been investigated with nanometric lateral resolution by scanning current spectroscopy on both epitaxial graphene (EG) grown on (0001) 4H-SiC and graphene exfoliated from highly oriented pyrolytic graphite deposited on the same substrate [deposited graphene (DG)]. This study reveals that...
Kim, Byoung-Kye Kim, Ju-Jin So, Hye-Mi Kong, Ki-jeong Chang, Hyunju Lee, Jeong-O Park, Noejung
The authors report the construction of carbon nanotube Schottky diodes by covering a selectively exposed area of the electrode with self-assembling molecules. Two self-assembling molecules with different polarities, 2-aminoethanethiol and 3-mercaptopropionic acid, were used to modify the Fermi level lineup at the selected contact. The devices showe...
Guasch, C. Doukkali, A. Bonnet, J.
The interface formation between Au and cleaved (110) GaSb surfaces is investigated at low temperature (LT
Lee, JL Weber, M Lynn, K Kim, T Park, YJ Lee, JW Kim, JK
open
Kim, JK Lee, JL Kim, T Park, YJ Shin, HE Lee, JW
open