Uppalapati, Balaadithya Kota, Akash Azad, Samee Muthusamy, Lavanya Tran, Binh Tinh Leach, Jacob H. Splawn, Heather Gajula, Durga Chodavarapu, Vamsy P. Koley, Goutam
...
Published in
ECS Journal of Solid State Science and Technology
A transparent indium tin oxide (ITO) contact to bulk n-GaN and n-GaN thin film on c-face sapphire with a specific contact resistivity of 8.06 × 10−4 Ω.cm2 and 3.71 × 10−4 Ω.cm2 was measured, respectively. Our studies relied on an RF sputtering system for ITO deposition. We have investigated the formation of the ITO-based contacts on untreated and p...
Hajara, P. Rose, T. Priya Saji, K. J.
Published in
Journal of Physics: Conference Series
ZnO thin films have been deposited on glass substrates by radio frequency (RF) magnetron sputtering from a zinc oxide target in order to investigate the effect of RF power and substrate temperature on the properties of the deposited films. The structural and optical properties of the films were characterized by X-ray diffraction (XRD), field emissi...
Patel, Nicky P Chauhan, Kamlesh V
Published in
Materials Research Express
Thin films of ZnO:Al were synthesized on glass substrates by RF magnetron sputtering. Structural, optical, wettability and anti-icing properties of the thin films are studied as a function of substrate temperature and sputtering power. XRD patterns showed an increase in the intensity of (002) peak when the sputtering power and substrate temperature...
Nilsson, Julia
The increasing energy demand, combined with the use of harmful non-renewable energy sources calls for the search of alternative methods to cover our energy need.Renewable energy can be harvested in different ways, through the movement of wind and water, biomass, or directly from the rays of the sun, as in the case of photovoltaic (PV) devices. Whil...
fasquelle;, didier
Tungsten trioxide thin films were deposited on silicon substrates by non-reactive RF sputtering from a WO3 target at room temperature. The WO3 films were post-annealed at two different temperatures, 400 °C and 500 °C. The morphological and microstructural properties of these films were analyzed by using atomic force microscopy and X-ray diffraction...
merabet;, hocine
Silicon and silicon nitride (Si3N4) are some of the most appealing candidates as anode materials for LIBs (Li-ion battery) due to their favorable characteristics: low cost, abundance of Si, and high theoretical capacity. However, these materials have their own set of challenges that need to be addressed for practical applications. A thin film consi...
núñez-cascajero;, arántzazu
Compact Al0.37In0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN...
fattah, ahmed
Ultraviolet (UV) photodetectors (PDs) based on high-quality well-aligned ZnO nanorods (NRs) were fabricated using both modified and conventional chemical bath deposition (CBD) methods. The modified chemical bath deposition (M-CBD) method was made by adding air bubbles to the growth solution during the CBD process. The viability and effectiveness of...
Wang, Xiao Shen, Zhihua Li, Jie Wu, Shengli
Published in
Membranes
IGZO thin films can be used as active layers of thin-film transistors and have been widely studied. However, amorphous indium gallium zinc oxide (IGZO) fabricated at room temperature is vulnerable in subsequent manufacturing processes, such as etching and sputtering; this limits IGZO thin film transistors’ (TFTs) use in commercial products. In this...
Banerjee, Sudipta Das, Mukul K.
Published in
Optical and Quantum Electronics
Surface recombination loss limits the efficiency of crystalline silicon (c-Si) solar cell and effective passivation is inevitable in order to reduce the recombination loss. In this article, we have reviewed the prospects of aluminium oxide (Al2O3) as surface passivation material and associated process technologies are also addressed. Its underlined...
