The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy
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Both In2O3 and ZnO are potential oxide semiconductor materials for optoelectronics devices. Semi-polar (101) plane wurtzite (w-)ZnO films were grown on bcc-In2O3(111) by metal organic chemical vapor deposition and the epitaxial relation is w-ZnO(101) parallel to bcc-In2O3(111). We have measured the valence band offset (VBO) of w-ZnO(101)/bcc-In2O3(...
