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GROWTH OF WIDE-BAND GAP IMMISCIBLE II-VI ALLOYS BY METALORGANIC VAPOR-PHASE EPITAXY

dc, lu acad, lu dc r chinese

Although metalorganic vapor phase epitaxy (MOVPE) is generally regarded as a non-equillibrium process, it can be assumed that a chemical equilibrium is established at the vapor-solid interface in the diffusion limited region of growth rate. In this paper, an equilibrium model was proposed to calculate the relation between vapor and solid compositio...

GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE

dc, lu liu, xl wang, d lin, ly acad, lu dc r chinese

GaSb layers are grown on GaSb substrates; the effects of input partial pressure of trimethylantimony and the V/III ratio are studied. A model of the MOVPE phase diagram for the growth of GaSb and GaAsxSb1-x is developed which assumes thermodynamic equilibrium to be established at the solid-vapor interface.

Publication search with Omvpe as keyword

GROWTH OF WIDE-BAND GAP IMMISCIBLE II-VI ALLOYS BY METALORGANIC VAPOR-PHASE EPITAXY

GROWTH OF GASB AND GAASSB IN THE SINGLE-PHASE REGION BY MOVPE

Publication search
with Omvpe as keyword