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GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics

Photovoltaics (PVs) based on nanostructured III/V semiconductors can potentially reduce the material usage and increase the light-to-electricity conversion efficiency, which are anticipated to make a significant impact on the next-generation solar cells. In particular, GaAs nanowire (NW) is one of the most promising III/V nanomaterials for PVs due ...

High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD

Surface characterization of AlGaN grown on Si (111) substrates

Up to 500 nm thick crack-free Al(0.25)Ga(0.75)N and Al(0.32)Ga(0.68)N epilayers have been grown on Si (111) substrates. The surface morphology of samples was investigated by an optical microscope and a scanning electron microscope (SEM). Pits and shale-like surface structure have been observed. XRD rocking curve measurements indicate the crystal qu...

Hole mediated magnetism in Mn-doped GaN nanowires

The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys

First principles study of the electronic properties of twinned SiC nanowires

Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectrosco...

Growth Simulations of Self-Assembled Nanowires on Stepped Substrates

The growth of self-assembled nanowires on stepped substrates is modeled by means of kinetic Monte Carlo simulations. It is found that the energy barrier at the step edges has a great effect on the formation of nanoislands on stepped substrates. As the barrier is smaller than 0.1 eV, nanowires with high aspect ratios can be obtained. The width, aspe...

Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation

Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates