Hadfield, Andrew James
The primary work presented in this thesis is the development and improvement of zero-bias detector diodes, for mm-Wave and THz applications. These devices were based on Asymmetric Spacer Layer Tunnel (ASPAT) diodes made on the GaAs and InP platforms. Accurate physical models of two state of the art ASPATs were created, which showed close agreement ...
Brault, Julien Al khalfioui, Mohamed Leroux, Mathieu Matta, Samuel Ngo, Thi-Huong Zaiter, Aly Courville, Aimeric Damilano, Benjamin Chenot, Sébastien Duboz, Jean-Yves
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Deep ultraviolet (DUV) light emitting diodes (LED) are expected to be the next generation of UV sources, offering significant advantages such as compactness, low consumption and long lifetimes. Yet, improvements of their performances are still required and the potential of AlyGa1-yN quantum dots as DUV emitters is investigated in this study. Using ...
Fan, Zongjian
Comprehensive investigations of the materials properties and device applications made from molecular beam epitaxy (MBE) prepared ZnSe-GaAs epilayers have been performed. The properties of ZnSe-GaAs (100) interfaces were studied in order to enable the fabrication of high quality ZnSe-GaAs heterovalent structures (HS). The atomic structure of the ZnS...
Masset, Gauthier
Recently, a new origin for ferroelectricity has been discovered and studied in perovskite superlattices ABO₃/A'BO₃, (ABO₃ with A = rare earth or alkaline earth, B = 3d, 4d or 5d transition metal). This phenomenon, called improper hybrid ferroelectricity, rises considerable interest, since it may yield the emergence of a multiferroic or even magneto...
Jorgensen, Kelsey
III-N devices have become critical in the fields of energy-efficient lighting and power electronics. Though III-N devices have different materials requirements depending on the end application of the device, one thing common to all devices is the need for extremely pure films. Impurities originating from the atmosphere, wafer processing, or source ...
Pelati, D. Patriarche, G. Largeau, L. Mauguin, O. Travers, L. Brisset, F. Glas, F. Oehler, F.
International audience
Pelati, D. Patriarche, G. Mauguin, O. Largeau, L. Travers, L. Brisset, F. Glas, F. Oehler, F.
International audience
Delorme, Olivier
Le Bismuth, un élément V, a longtemps été négligé dans la famille des semi-conducteurs III V. Toutefois, les matériaux bismures connaissent un intérêt croissant depuis le début des années 2000, principalement en raison de l’exceptionnelle réduction de l’énergie de bande interdite couplée à la forte augmentation de l’énergie entre la bande de valenc...
Bouras, Mohamed Han, Dong Cueff, Sébastien Bachelet, Romain Saint-Girons, Guillaume
We show that conducting LaxSr1-xTiO3 (LSTO) presents excellent plasmonic properties in the near-to mid-infrared region, and that these properties can be tuned with unrivalled flexibility by controlling the La composition. Taking advantage of this outstanding plasmonic response, we demonstrate a new class of hyperbolic metamaterials (HMMs) composed ...
Freeze, Christopher R
Perovskite oxides have long been lauded for their array of technologically useful properties, along with the promise of monolithic integration due to their compatible structure. Despite this potential, few real-world applications have yet to make it to market. This work aims to demonstrate the capabilities of the perovskite family of materials thro...