Although superconductivity in strontium titanate (SrTiO3) was discovered in the 1960s, the origin of superconductivity in SrTiO3 has not been completely understood. Moreover, its unusual superconducting characteristics have made SrTiO3 a fascinating playground to potentially study multiple aspects of unconventional superconductivity. For example, S...
In the field of semiconductor devices, the III-nitride material system, which is mainly made up of Indium Nitride (InN), Gallium Nitride (GaN) and Aluminum Nitride (AlN), has seen a great deal of attention over the past decade. Despite the maturity of this field of research, the growth mechanics and physics that govern the behavior of these devices...
The primary work presented in this thesis is the development and improvement of zero-bias detector diodes, for mm-Wave and THz applications. These devices were based on Asymmetric Spacer Layer Tunnel (ASPAT) diodes made on the GaAs and InP platforms. Accurate physical models of two state of the art ASPATs were created, which showed close agreement ...
Deep ultraviolet (DUV) light emitting diodes (LED) are expected to be the next generation of UV sources, offering significant advantages such as compactness, low consumption and long lifetimes. Yet, improvements of their performances are still required and the potential of AlyGa1-yN quantum dots as DUV emitters is investigated in this study. Using ...
Comprehensive investigations of the materials properties and device applications made from molecular beam epitaxy (MBE) prepared ZnSe-GaAs epilayers have been performed. The properties of ZnSe-GaAs (100) interfaces were studied in order to enable the fabrication of high quality ZnSe-GaAs heterovalent structures (HS). The atomic structure of the ZnS...
Recently, a new origin for ferroelectricity has been discovered and studied in perovskite superlattices ABO₃/A'BO₃, (ABO₃ with A = rare earth or alkaline earth, B = 3d, 4d or 5d transition metal). This phenomenon, called improper hybrid ferroelectricity, rises considerable interest, since it may yield the emergence of a multiferroic or even magneto...
III-N devices have become critical in the fields of energy-efficient lighting and power electronics. Though III-N devices have different materials requirements depending on the end application of the device, one thing common to all devices is the need for extremely pure films. Impurities originating from the atmosphere, wafer processing, or source ...
International audience
International audience
Le Bismuth, un élément V, a longtemps été négligé dans la famille des semi-conducteurs III V. Toutefois, les matériaux bismures connaissent un intérêt croissant depuis le début des années 2000, principalement en raison de l’exceptionnelle réduction de l’énergie de bande interdite couplée à la forte augmentation de l’énergie entre la bande de valenc...
