Within the scope of this work, the epitaxial growth of strontium titanate (SrTiO3) thin films is realized for the first time by liquid delivery-spin metal-organic vapor phase epitaxy (MOVPE). During the MOVPE growth process, the Sr and Ti gas phase species can be independently controlled and high oxygen partial pressures can be achieved. Combined, ...
Published in Japanese Journal of Applied Physics
We investigated influences of mask pattern on the emission from InGaN multiple quantum wells through the differences in plane orientation appearing on the multifaceted islands in selective area metalorganic vapor phase epitaxy. Cathodoluminescence mapping confirmed that emission colors changed depending on the crystal plane. Photoluminescence spect...
Published in Journal of Physics D: Applied Physics
We report on the formation process of GaN/AlN quantum dots (QDs) which arises after the deposition of 1–2 monolayers of GaN on an AlN/sapphire template followed by a distinct growth interruption (GRI). The influence of the duration of a GRI on the structural and optical properties of the GaN layer has been systematically investigated. QDs develop f...
We introduce a new design space for optimizing III-V devices monolithically grown on Silicon substrates by extending the concept of nano-ridge engineering from binary semiconductors such as GaAs, InAs and GaSb to the ternary alloy InGaAs. This allows controlling the fundamental lattice constant of the fully relaxed ternary nano-ridge which thereby ...
Neutron detectors play a crucial role in various applications such as homeland security (airports, borders and ports) to control illegal activities involving nuclear materials, nuclear power plants for neutron radiation safety and monitoring, high energy physics and nuclear science. In addition, recent events such as the Fukushima explosion and the...
International audience
Published in Nanotechnology
InAs quantum dots (QDs) are grown on an In0.53Ga0.47As interlayer and embedded in an InP(100) matrix. They are fabricated via droplet epitaxy (DE) in a metal organic vapor phase epitaxy (MOVPE) reactor. Formation of metallic indium droplets on the In0.53Ga0.47As lattice-matched layer and their crystallization into QDs is demonstrated for the first ...
International audience
GaN layers were grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaAs (110) substrate at temperature varying in the range of 750–900 °C. 50 nm-thick GaN layer grown at low temperature (550 °C) was used as buffer layer. Scanning electron microscopy (SEM), atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD) and room temperat...
Published in Nano Letters
Nanowire solar cells have the potential to reach the same efficiencies as the world-record III–V solar cells while using a fraction of the material. For solar energy harvesting, large-area nanowire solar cells have to be processed. In this work, we demonstrate the synthesis of epitaxial InP nanowire arrays on a 2 inch wafer. We define five array ar...
