Published in 2D Materials
The structural properties of co-deposited ultrathin PtSe2 films grown at low temperatures by molecular beam epitaxy on c-plane Al2O3 are studied. By simultaneously supplying a Se flux from a Knudsen cell and Pt atoms from an electron-beam evaporator, crystalline (001)-oriented PtSe2 films were formed between 200 °C and 300 °C. The long separation b...
Published in Materials for Quantum Technology
Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV–VI materials family that has significant untapped potential for exploration. Due to its high electron mobility, strong spin–orbit cou...
Published in Nanotechnology
Cathodoluminescence mapping is used as a contactless method to probe the electron concentration gradient of Te-doped GaAs nanowires. The room temperature and low temperature (10 K) cathodoluminescence analysis method previously developed for GaAs:Si is first validated on five GaAs:Te thin film samples, before extending it to the two GaAs:Te NW samp...
Afin de répondre au défi énergétique et aux enjeux de la miniaturisation des dispositifs électro-niques, une voie alternative consiste à utiliser le spin des électrons en plus de la charge. L’ensemble de ces travaux est regroupé sous le nom générique de « spintronique ». Un objectif général est le développement de dispositif d’électronique de spin ...
Published in Nano Letters
The cross-sectional dimensions of nanowires set the quantization conditions for the electronic subbands they host. These can be used as a platform to realize one-dimesional topological superconductivity. Here we develop a protocol that forces such nanowires to kink and change their growth direction. Consequently, a thin rectangular nanoplate is for...
Published in Nano Futures
Conventional doping processes are no longer viable for realizing extreme structures, such as a δ-doped layer with multiple elements, such as the heavy Bi, within the silicon crystal. Here, we demonstrate the formation of (Bi + Er)-δ-doped layer based on surface nanostructures, i.e. Bi nanolines, as the dopant source by molecular beam epitaxy. The c...
Published in Journal of Physics D: Applied Physics
The effects of Si doping well beyond the Mott transition limit on the structural, electrical, and optical properties of plasma assisted molecular beam epitaxy grown GaN layers were studied. Si doping up to a doping density of 1.0 × 1020 cm−3 resulted in rough surface morphology and degraded crystal quality. It also showed higher tensile strain, but...
Published in Journal of Scientific Computing
We consider the classical molecular beam epitaxy (MBE) model with logarithmic type potential known as no-slope-selection. We employ a third order backward differentiation (BDF3) in time with implicit treatment of the surface diffusion term. The nonlinear term is approximated by a third order explicit extrapolation (EP3) formula. We exhibit mild tim...
In this article, we investigate the molecular beam epitaxy growth of unannealed 1.12 eV InGaAsN solar cells. The impact of the growth temperature, the As/III ratio and the bismuth used as a surfactant is reported. An in-situ curvature measurement setup enables to monitor and ensure a constant N incorporation during the InGaAsN growth. Ex-situ chara...
Published in Optical and Quantum Electronics
In the local droplet etching (LDE) method, the fine split structure (FSS) of quantum dots (QDs) is directly related to the shape of the nanopores formed after annealing. The formation of highly symmetrical nanoporous is the key to the preparation of GaAs/AlGaAs QDs with small FSS. The measurement and characterization of the nano pore shape before a...
