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Investigation of the Optical Properties of InSb Thin Films Grown on GaAs by Temperature-Dependent Spectroscopic Ellipsom...

Published in Journal of Applied Spectroscopy

InSb thin films were grown on GaAs substrates by metal organic chemical vapor deposition (MOCVD) and investigated by temperature-dependent spectroscopic ellipsometry (TD-SE). The refractive index, extinction coefficient, and dielectric function of the InSb films were extracted. The variation of critical point energies (E1, E1+Δ1, E2, E1'\documentcl...