Published in Optical and Quantum Electronics
In this paper, a simple transport model is developed using the rate and continuity equation for the analysis of transient response of a multiple quantum well infrared photodetector. The effect of carrier capture and the doping dependent optical absorption are incorporated in the model for accurate estimation of responsivity in the frequency domain....
Published in Ultramicroscopy
We present an electron tomography method for the comprehensive characterization of buried III-V semiconductor interfaces that is based on chemical-sensitive high-angle annular dark-field scanning transmission electron microscopy. For this purpose, an (Al,Ga)As/GaAs multi-layer system grown by molecular beam epitaxy is used as a case study. Isoconce...
This paper gives an overview on research and development conducted at Fraunhofer ISE regarding III-V based photovoltaic cells used as photonic power converters (PPC). It reports on a novel device architecture which combines advantages from both lateral and vertical series interconnection, a new GaAs based champion device with a conversion efficienc...
On-chip quantum light sources on silicon photonic platforms have been the primary building block for miniaturization and scaling of integrated quantum photonic system. Epitaxial growth of III-V semiconductor quantum dots encapsulated in nanowires offers numerous advantages, such as high material quality, monolithic integration on lattice-mismatched...
status: published
Published in Materials
Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared ...
Published in Journal of the Korean Physical Society
Te crystallites/few atomic-layer MoTe2 films grown on (100) GaAs substrates by using metal-organic chemical — vapor deposition (MOCVD) were investigated. MOCVD provides high-quality films, controllable film thickness, composition uniformity, and scalability to wafer scale size via the pyrolysis process of metal-organic sources. We observed several ...
status: published
In this paper a method is presented to accurately and quickly interpolate a dataset of the complex refractive index of arbitrary compound semiconductors. The method is based on a parameter morphing algorithm which maps critical points of two endpoint materials with known optical parameter sets onto each other. Every desired intermediate material co...
Photovoltaic cells for conversion of wavelengths in the O-band around 1310 nm are developed. Excellent performance with an efficiency of 51.1% at elevated irradiance is demonstrated with an InGaAsP based cell grown lattice matched on InP. Under one sun irradiance a bandgap-voltage difference of only W OC =331 mV is achieved. In addition, metamorphi...
