Signature of Ballistic Band-Tail Tunneling Current in Tunnel FET
status: published
Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors
Published in Materials
Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared ...
Van der Waals Heteroepitaxy of Te Crystallites/2H-MoTe2 Atomically Thin Films on GaAs Substrates by Using Metal-Organic ...
Published in Journal of the Korean Physical Society
Te crystallites/few atomic-layer MoTe2 films grown on (100) GaAs substrates by using metal-organic chemical — vapor deposition (MOCVD) were investigated. MOCVD provides high-quality films, controllable film thickness, composition uniformity, and scalability to wafer scale size via the pyrolysis process of metal-organic sources. We observed several ...
Determination of the Complex Refractive Index of Compound Semiconductor Alloys for Optical Device Modelling
In this paper a method is presented to accurately and quickly interpolate a dataset of the complex refractive index of arbitrary compound semiconductors. The method is based on a parameter morphing algorithm which maps critical points of two endpoint materials with known optical parameter sets onto each other. Every desired intermediate material co...
51% Efficient Photonic Power Converters for O-Band Wavelengths around 1310 nm
Photovoltaic cells for conversion of wavelengths in the O-band around 1310 nm are developed. Excellent performance with an efficiency of 51.1% at elevated irradiance is demonstrated with an InGaAsP based cell grown lattice matched on InP. Under one sun irradiance a bandgap-voltage difference of only W OC =331 mV is achieved. In addition, metamorphi...
Eigenschaften ultradünner Galliumnitrid- und -Oxidschichten über InGaN-Quantenfilmen für sensorische Anwendungen / Prope...
Die technologische Entwicklung der heutigen Zeit befasst sich zunehmend mit der Kombination traditionell verwendeter Materialien mit organischen Verbindungen. Dadurch ergeben sich eine Vielzahl neuer Anwendungsgebiete und oft einfachere und kostengünstige Bauelemente. In dieser Arbeit wurde untersucht, wie sich das bereits in der Halbleitertechnolo...
Direct Growth of GaInP/GaAs/Si Triple-Junction Solar Cell with 22.3% AM1.5g efficiency
III–V on Si multijunction solar cells exceede the efficiency limit of Si single‐junction devices but are often challenged by expensive layer transfer techniques. Here, progress in the development of direct epitaxial growth for GaInP/GaAs/Si triple‐junction solar cells is reported. III–V absorbers with a total thickness of 4.9 μm are grown onto a Si...
Back Reflector with Diffractive Gratings for Light-Trapping in Thin-Film III-V Solar Cells
We report on the development of light-Trapping architectures applied to thin-film solar cells. In particular, we focus on enhancing the absorption at 1-eV spectral range for dilute nitride and quantum dot materials and report on the influence of planar back reflectors on the photovoltaic properties. Moreover, we discuss the properties of polymer di...
Surface functionalization of plasmonic III-V semiconductors for surface-enhanced vibrational spectroscopy
This thesis deals with the surface functionalization of nanostructured plasmonic III-V semiconductors for surface-enhanced vibrational spectroscopy relevant to identify minute amounts of analyte molecules.The first chapter outlines the theoretical foundations of surface-enhanced vibrational spectroscopy based on plasmonics. Comparing the plasmonic ...
Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide...
© 2018 American Chemical Society. Ga1-xInxP is a technologically important III-V ternary semiconductor widely utilized in commercial and record-efficiency solar cells. We report the growth of Ga1-xInxP by water-vapor-mediated close-spaced vapor transport. Because growth of III-V semiconductors in this system is controlled by diffusion of metal oxid...
