Wide bandgap (WBG) semiconductor devices allow power electronic converters to achieve higher efficiency, higher power density and potentially higher reliability. However, the design challenges accompanied by applying the new WBG devices have risen accordingly. In this paper, a non-isolated bidirectional DC-DC converter equipped with Gallium Nitride...
Wide bandgap (WBG) semiconductor devices allow power electronic converters to achieve higher efficiency, higher power density and potentially higher reliability. However, the design challenges accompanied by applying the new WBG devices have risen accordingly. In this paper, a non-isolated bidirectional DC-DC converter equipped with Gallium Nitride...
Wide bandgap (WBG) semiconductor devices allow power electronic converters to achieve higher efficiency, higher power density and potentially higher reliability. However, the design challenges accompanied by applying the new WBG devices have risen accordingly. In this paper, a non-isolated bidirectional DC-DC converter equipped with Gallium Nitride...
Wide bandgap (WBG) semiconductor devices allow power electronic converters to achieve higher efficiency, higher power density and potentially higher reliability. However, the design challenges accompanied by applying the new WBG devices have risen accordingly. In this paper, a non-isolated bidirectional DC-DC converter equipped with Gallium Nitride...
Wide bandgap (WBG) semiconductor devices allow power electronic converters to achieve higher efficiency, higher power density and potentially higher reliability. However, the design challenges accompanied by applying the new WBG devices have risen accordingly. In this paper, a non-isolated bidirectional DC-DC converter equipped with Gallium Nitride...
Wide bandgap (WBG) semiconductor devices allow power electronic converters to achieve higher efficiency, higher power density and potentially higher reliability. However, the design challenges accompanied by applying the new WBG devices have risen accordingly. In this paper, a non-isolated bidirectional DC-DC converter equipped with Gallium Nitride...
Wide bandgap (WBG) semiconductor devices allow power electronic converters to achieve higher efficiency, higher power density and potentially higher reliability. However, the design challenges accompanied by applying the new WBG devices have risen accordingly. In this paper, a non-isolated bidirectional DC-DC converter equipped with Gallium Nitride...
Wide bandgap (WBG) semiconductor devices allow power electronic converters to achieve higher efficiency, higher power density and potentially higher reliability. However, the design challenges accompanied by applying the new WBG devices have risen accordingly. In this paper, a non-isolated bidirectional DC-DC converter equipped with Gallium Nitride...
Wide bandgap (WBG) semiconductor devices allow power electronic converters to achieve higher efficiency, higher power density and potentially higher reliability. However, the design challenges accompanied by applying the new WBG devices have risen accordingly. In this paper, a non-isolated bidirectional DC-DC converter equipped with Gallium Nitride...
Le projet de cette thèse est de réaliser un convertisseur DC/DC isolé à haute fréquence de découpage basé sur la mise en œuvre de composants en GaN. Le but est d'augmenter très fortement les densité de puissance commutées par rapport aux solutions actuelles. Cette thèse mets en oeuvre les composants GaN afin de déterminer les meilleurs conditions d...
