Wei, Chen Frenzel, Max Ye, Lin Huang, Zhilong Danyushevsky, Leonid
Published in
American Mineralogist
Germanium (Ge) is a critical raw material for emerging high-tech and green industries, resulting in considerable recent interest in understanding its distribution and geochemical behavior in ore deposits. In this contribution, the distribution of Ge and related trace elements in the Fule Pb-Zn(-Ge) deposit, South China, is investigated to reveal th...
Schlipf, Jón Benedikt
Driven by the continuous research progress in integrated electronics towards increasing complexity and miniaturization, semiconductor technology has not only yielded very powerful electronic devices, but also provided the necessary tools for miniaturization of mechanical, optical and other functions into micro- and nanoscale devices. While transist...
Hanuš, Tadeáš
Semiconductor-based freestanding membranes (FSMs) have recently become central to the rapidly expanding frontiers of nanoscience and technology, and a highly promising area of advanced materials research. FSMs offer an extra degree of freedom for implementations that cannot be obtained by conventional methods such as heteroepitaxy, which often invo...
Riadi, Nassim Bruguier, Florent Benoit, Pascal Dupuis, Sophie Flottes, Marie-Lise
Due to the globalization of the semiconductor industry, Integrated Circuits (ICs) and Intellectual Properties (IPs) are susceptible to specific threats. IP piracy, overproduction, and introduction of hardware Trojans can indeed compromise valuable design information and trust in the design flow. Logic Locking (LL) is one of the most popular Design-...
Vallès, V de Labastida, M Fernández López, J Cortina, J L
Published in
The Science of the total environment
The European Union (EU) identified a list of Critical Raw Materials (CRMs) crucial for its economy, aiming to find alternative sources. Seawater is a promising option as it contains almost all elements, although most at low concentrations. However, to the present, the CRMs' recovery from seawater is technically and economically unfeasible. Other al...
Parize, Julien Jarrin, Thomas Fées, Antoine Lambert, Damien Jay, Antoine Morin, Valentin Hemeryck, Anne Richard, Nicolas
To assess the sensitivity of microelectronic devices to displacement damage, molecular dynamics simulations of collision cascades in GaN, Si and Ge are performed. We compare results on these three materials using a wide range of data coming from a very large amount of simulations. The statistical analysis of these data probes into the dynamics of c...
Daniel, Valentin
Les cellules solaires commerciales composées d’un empilement d’éléments III-V cru sur substrat de germanium (Ge) sont très largement utilisées dans le domaine industriel spatial. Ces dispositifs photovoltaïques hautes performances peuvent cependant être optimisés. En effet, seule une fraction (environ 5%) de l’épaisseur totale des wafers de Ge util...
Tetzner, Henriette
The hetero-integration of group IV and III-V epitaxial layers on silicon (Si) substrates enables novel devices for optoelectronic and high-power applications. However, lattice and thermal mismachtes lead to an unavoidable formation of defects in hetero-epitaxy. The consideration of these defects is important in semiconductor devices as they affect ...
Chapotot, Alexandre
L’énergie photovoltaïque (PV) occupe une place croissante dans le mix énergétique. Cependant ses défis, tels que l’inconstance de la production, restreignent son utilisation à grande échelle. Le solaire spatial (Space Based Solar Power, SBSP) se présente comme une potentielle alternative complémentaire au PV terrestre, exploitant l’énergie solaire ...
Yamamoto, Keisuke Wang, Dong Loo, Roger Porret, Clément Cho, Jinyoun Dessein, Kristof Depauw, Valérie
Published in
Japanese Journal of Applied Physics
Ge-on-Insulator (GOI) is considered to be a necessary structure for novel Ge-based devices. This paper proposes an alternative approach for fabricating GOI based on the Ge-on-Nothing (GeON) template. In this approach, a regular macropore array is formed by lithography and dry etching. These pores close and merge upon annealing, forming a suspended ...
