III-Nitride ternary alloys are used in a wide range of applications in modern technology. Despite being a relatively mature technology in many aspects, shortcomings still exist and challenges remain to be overcome, particularly owing to the limited alloy range for which existing commercial fabrication methods can produce single phase III-Nitride al...
In this paper, a two-layer model was used to investigate the electrical properties of InGaN epilayer grown by MOCVD on a semiconducting GaN template substrate. The elaboration process was optimized to obtain high-quality InGaN epilayers with respect to the indium composition. The details of structural and optical properties as well as the surface m...
Published in International Journal of Materials Research
Cu films were grown on (0001) α-Al2O3 single-crystals by magnetron sputtering. The growth behavior was manipulated by Ar+-ion sputter cleaning of the substrates at kinetic energies between 100 and 500 eV, changing the sputter rate from 0.75 to 1.1 nm/s, and using nominal substrate temperatures of 100 and 200 °C, respectively. Polycrystalline Cu fil...
Presented online January 11, 2022 from 12:00 p.m.-1:00 p.m., Georgia Tech, Atlanta, GA. / Dr. W. Alan Doolittle is the Joseph M. Pettit professor in the School of Electrical and Computer Engineering at Georgia Institute of Technology. Doolittle is a proud, two-time Georgia Tech alumnus, earning his B.E.E. degree with highest honors in 1989 and his ...
The study of step dynamics on vicinal surfaces is a long-standing problem in crystal growth, dating back to the seminal work of Burton, Cabrera, and Frank (BCF) in 1951. On these surfaces, the crystal grows by step flow, i.e., by propagation of the atomic steps, which may develop instabilities breaking the regularly spaced, straight-step initial co...
Les alliages métalliques complexes (CMA) désignent des composés intermétalliques à grande maille (voire infinie pour les quasicristaux), présentant une sous-structure en agrégats assemblés suivant des règles précises. Les CMA possèdent des propriétés physico-chimiques, notamment de surface qui peuvent être intéressantes pour un certain nombre d'app...
In this work, we have performed for the first time the catalyst-free growth of III-As by hydride vapor phase epitaxy (HVPE). We first studied the self-assembled growth of InAs nanowires on Si(111) and the effect of the growth conditions on InAs nanowire growth. A kinetic model has been developed demonstrating that growth occurs through a direct con...
We explored the time dependence of the nanoscale domain relaxation mechanism in epitaxial K0.5Na0.5NbO3 (KNN) thin films grown on La0.67Sr0.33MnO3/SrTiO3 (001) substrates over the thickness range 20− 80 nm using scanning probe microscopy. Kelvin probe force microscopy (KFM) and piezoresponse force microscopy were performed on pulsed-laser-depositio...
De nos jours, la diminution en taille des composants a fait rentrer le domaine de la micro-optoélectronique dans une nouvelle ère qui dépasse le cadre de la loi de Moore, qui prédit une croissance exponentielle du nombre de composants sur une puce électronique dans le temps. En effet, la miniaturisation des composants, qui a permis cette densificat...
Durant cette thèse nous reporterons la réalisation d'hétérostructures à base d'As permettant la fabrication de sources lumineuses émettant à environ 1.3 μm. Cependant, l'hétéro-épitaxie des semi-conducteurs a base dAs sur un substrat de silicium restent un défi majeur principalement en raison de la différence du paramètre de maille et de la polarit...
