Growth and characterization of pure stannite Cu2MnSnS4 thin films deposited by dip-coating technique
Published in Applied Physics A
Semiconductor compounds Cu2MnSnS4 absorbers materials were synthesis by the sol–gel approach and deposited using dip-coating technique on ordinary glass substrates. In this work, we have studied the effect of various annealing temperature such as: 400 °C, 425 °C, 450 °C and 475 °C for 1 min on the structural, compositional, morphological, optical a...
