In this paper, six-layer AlN/Al gradient composites were prepared by a spark plasma sintering process to study the influences of sintering temperature and holding time on the microstructure and mechanical properties. The well-bonded interface enables the composite to exhibit excellent thermal and mechanical properties. The hardness and thermal expa...
Face-to-face annealed sputter-deposited aluminum nitride (AlN) templates (FFA Sp-AlN) are a promising material for application in deep-ultraviolet light-emitting diodes (DUV-LEDs), whose performance is directly related to the crystallinity of the AlN film. However, the influence of the sputtering conditions and annealing on the crystallinity of AlN...
This paper investigates the resonant behaviour of silicon-based micro-oscillators with a length of 3600 µm, a width of 1800 µm and a thickness of 10 µm over a wide range of ambient gas (N2) pressures, extending over six orders of magnitude from 10−3 mbar to 900 mbar. The oscillators are actuated piezoelectrically by a thin-film aluminium-nitride (A...
This paper presents a multielement annular ring ultrasound transducer formed by individual high-frequency PMUTs (17.5 MHz in air and 8.7 MHz in liquid) intended for high-precision axial focalization and high-performance ultrasound imaging. The prototype has five independent multielement rings fabricated by a monolithic process over CMOS, allowing f...
RESUME-Les calibres en tension attendus des futurs composants de puissance en carbure de silicium, au-delà de 15 kV, nécessitent d'adapter le système d'isolation électrique des modules de puissance afin de permettre leur utilisation pour les applications Moyenne et Haute Tension. Le papier présente l'étude d'une nouvelle structure de substrat céram...
The piezoelectric vibration energy harvester (PVEH) based on the variable cross-section cantilever beam (VCSCB) structure has the advantages of uniform axial strain distribution and high output power density, so it has become a research hotspot of the PVEH. However, its electromechanical model needs to be further studied. In this paper, the bidirec...
High-crystalline aluminum nitride (AlN) thin films are essential for device applications, and epitaxial growth is a promising approach to improve their crystalline quality. However, a high substrate temperature is usually required for the epitaxial growth, which is not compatible with the complementary metal-oxide-semiconductor (CMOS) process. Furt...
In this study, we report on the deposition of a highly crystalline AlN interfacial layer on GaN at 330 °C via plasma-enhanced atomic layer deposition (PEALD). Trimethylaluminum (TMA) and NH3 plasma were used as the Al and N precursors, respectively. The crystallinity and mass density of AlN were examined using X-ray diffraction (XRD) and X-ray refl...
In this work, the aim is to improve the quality of AlN base layers on sapphire substrates to enable the fabrication of high performance ultraviolet (UV) light-emitting diodes (UV LEDs). The main issues for UV LEDs are still a limited internal quantum efficiency due to a high amount of threading dislocations, but also a limited light extraction effi...
High power electronics using wide bandgap materials are maturing rapidly, and significant market growth is expected in a near future. Ultra wide bandgap materials, which have an even larger bandgap than GaN (3.4 eV), represent an attractive choice of materials to further push the performance limits of power devices. In this work, we report on the f...
