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A practical route towards fabricating GaN nanowire arrays

GaN nanowire (NW) arrays have been fabricated by the electrodeless photoelectrochemical (PEC) etching method for the first time. Under appropriate conditions, the etching process is just a dislocation-hunted process, in which the etching solution "digs down'' along the threading dislocations, resulting in the formation of GaN NWs by preferentially ...

Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays

Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition

Analysis of Modified Williamson-Hall Plots on GaN Layers

The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys

Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing

Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate

First principles study of the electronic properties of twinned SiC nanowires

Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain

The growth and characterization of high-quality ultrathin Fe(3)O(4) films on semiconductor substrates is a key step for spintronic devices. A stable, single-crystalline ultrathin Fe(3)O(4) film on GaAs(001) substrate is obtained by post-growth annealing of epitaxial Fe film with thicknesses of 5 and 12 nm in air. Raman spectroscopy shows a high abi...

Behavioural investigation of InN nanodots by surface topographies and phase images

We employ surface topographies and phase images to investigate InN nanodots. The samples are annealed at 450, 500 and 550 square. The results reveal that the statistical distributions of number density and mean size depend on annealing ambient. The behaviours of thermal annealing between InN films and InN nanodots are distinguishable: the alloying ...