Published in Technical Physics Letters
AbstractThe design of a simple compact cryothermostat intended for studying the influence of γ irradiation on the optical losses of single-mode fluorosilicate optical fibers operating at a 1.31-μm wavelength is described. It is established that the radiation resistance of these optical fibers increases as the test temperature is decreased from +25 ...
Published in Technical Physics Letters
Two-dimensional interaction of a shock in air with elliptic area (two-dimensional gas bubble) filled with propane-oxygen mixture with addition of heavy gas is numerically studied using Euler’s equations. Propane combustion is modeled with one-stage Arrhenius kinetics. Three different ignition regimes are found: direct detonation initiation by suffi...
Published in Technical Physics Letters
AbstractThin aluminum nitride (AlN) films on sapphire (Al2O3) substrates were grown by means of ion-beam deposition (IBD) and studied by methods of scanning electron microscopy, Raman scattering, and optical transmission spectroscopy. Results revealed the influence of IBD process parameters (gas mixture composition, ion beam energy, and substrate t...
Published in Technical Physics Letters
AbstractSpectral characteristics of the Ga(In)As subcell of triple-junction GaInP/Ga(In)As/Ge solar cells have been experimentally and theoretically studied. It is established that the use of a wide-bandgap “window” layer with optimum thickness (100 nm for Ga0.51In0.49P, 110 nm for Al0.4Ga0.6As, and 115 nm for the Al0.8Ga0.2As) in Ga(In)As subcell ...
Published in Technical Physics Letters
AbstractEpitaxial Sr0.5Ba0.5Nb2O6/MgO thin films with layers of differing thickness (but with identical total thickness) have been prepared by radio-frequency magnetron sputtering with application of discontinuous deposition technology. It is established that a decrease in the layer thickness intensifies the unit-cell deformation, which is retained...
Published in Technical Physics Letters
AbstractThe possibility of generating ultrabroadband chaotic oscillations within a frequency range up to 60 GHz with a bipolar SiGe heterojunction transistor is demonstrated. The uppermost frequency of this range is determined by the cutoff frequency of the active generator element. Such a possibility appears after the generator structure is comple...
Published in Technical Physics Letters
AbstractA strong dependence of the optical breakdown in a liquid in the ultrasonic field on the amplitude and frequency of ultrasound is demonstrated. The increase in the intensity of spectral lines of potassium and oxygen during the optical breakdown is detected by the increase in the amplitude and frequency of ultrasound. At the same time, the ef...
Published in Technical Physics Letters
AbstractCurrent–voltage characteristics of composite field-effect transistors with active layers based on inorganic perovskites, nanocrystals of cesium halides CsPbBr3, embedded into the matrix of a semiconductor polymer PFO (PFO:CsPbBr3) have been analyzed. An increase in current gain β in current–voltage characteristics of structures of this kind...
Published in Technical Physics Letters
AbstractIn this paper, we propose and study a model of a source of ultra-wideband chaotic oscillations of the 30–50 GHz range in an IC version based on a 130-nm silicon-germanium technology.
Published in Technical Physics Letters
AbstractExperimental data obtained by the calorimetric method enable analyzing the energy storage capacity of phase-change materials based on n-alkanes. It is shown that a set of n-alkanes with the number of carbon atoms in the chain from 9 to 36 can be used to create comfortable living conditions for people in the temperature range from –50 to 70°...
