Majumder, K. Rakshit, P. Das, N. Ranjan
Published in
Semiconductors
AbstractWe present a theoretical study on gain and bandwidth of a CMOS-compatible submicron multi-diode Si avalanche photo-detector suitable for operation at high speed and moderate voltage. A two-dimensional model is used to obtain the avalanche build-up of carriers in the depleted region considering the dead-space effect. The regions between fing...
Ikonnikov, A. V. Dudin, V. S. Artamkin, A. I. Akimov, A. N. Klimov, A. E. Tereshchenko, O. E. Ryabova, L. I. Khokhlov, D. R.
Published in
Semiconductors
AbstractThe results of studies of the optical and transport properties of epitaxial Pb0.74Sn0.26Te(In) films with a differently treated surface are presented. A comparative analysis of the results makes it possible to establish that the characteristic features of the photoconductivity spectra are defined by processes in the bulk while the surface s...
Singh, N. Taunk, M.
Published in
Semiconductors
AbstractIn this study, we reported facile sonochemical synthesis of CuS nanoparticles by using CuCl2 and Na2S in aqueous medium without using any organic solvent and surfactant. Structural characterization of synthesized product using X-ray diffraction study revealed the formation of hexagonal structure of CuS in covellite phase. Crystallite size o...
Shaikh, R. A. Gani More, S. A. Bisen, G. G. Ghosh, S. S.
Published in
Semiconductors
AbstractCu2ZnSnS4 is suitable for high-performance thin-film solar cell because of its high absorbance coefficient, presence of non-toxic elements, excellent optoelectronic properties, and a near-perfect direct band gap. The effect of thermal annealing time (1–4 h) on the optical, morphological, and structural properties of Cu2ZnSnS4 coated through...
Revin, A. A. Mikhaylova, A. M. Konakov, A. A. Shastin, V. N.
Published in
Semiconductors
AbstractThe wave functions of low-lying 1s (A1), 2s, 2p0, 2p±, and 3p0 states of P, As, and Sb shallow donor centers in germanium are calculated in the scope of the envelope-function approximation taking into account the short-range impurity potential. The latter is constructed individually for each impurity allowing for the spatial permittivity di...
Reznik, R. R. Gridchin, V. O. Kotlyar, K. P. Kryzhanovskaya, N. V. Morozov, S. V. Cirlin, G. E.
Published in
Semiconductors
AbstractThe study concerns the issue of how the morphological characteristics and optical properties of morphologically branched InGaN nanostructures grown on the Si(111) surface by molecular-beam epitaxy depend on the substrate temperature. It is shown that, as the substrate temperature is elevated, the height of InGaN nanocolumns formed at the in...
Kuznetsova, I. V. Savenko, O. V. Kuznetsov, P. A.
Published in
Semiconductors
AbstractThe problem of the high-frequency conductivity of a thin conducting layer in a longitudinal magnetic field is solved using a kinetic approach taking into account the mirror-diffusion boundary conditions. The specularity coefficients of the layer surfaces are assumed to be different. An analytical expression is derived for the dimensionless ...
Yunin, P. A. Okhapkin, A. I. Drozdov, M. N. Korolev, S. A. Arkhipova, E. A. Kraev, S. A. Drozdov, Yu. N. Shashkin, V. I. Radishev, D. B.
Published in
Semiconductors
AbstractIt is known that diamond-like carbon layers consist of carbon components with sp2 (graphite) and sp3 (diamond) hybridizations of electron orbitals. The quantitative ratio between sp2 and sp3 components has a profound effect on the structural, morphological, optical, electrical, and mechanical properties of the films. In this study, the poss...
Zabavichev, I. Yu. Puzanov, A. S. Obolenskiy, S. V. Kozlov, V. A.
Published in
Semiconductors
AbstractThe change in the carrier mobility in GaAs structures after irradiation is numerically simulated. For each investigated scattering potential, the model parameters are determined at which the calculation data are consistent with the results of the experiment. It is shown for the first time that the form of the potential of scattering at radi...
Rumyantsev, V. V. Maremyanin, K. V. Razova, A. A. Sergeev, S. M. Mikhailov, N. N. Dvoretskii, S. A. Gavrilenko, V. I. Morozov, S. V.
Published in
Semiconductors
AbstractThe photoresponse is investigated in the frequency range of 0.15–15 THz in HgCdTe epitaxial layers with a cadmium concentration from 15.2 to 19.2% grown by molecular-beam epitaxy. It is shown that narrow-gap and gapless HgCdTe solid solutions can be used as detectors of both terahertz and sub-terahertz radiation with a characteristic respon...
