Published in Semiconductors
AbstractThe effect of ambient humidity on the electrical conductivity of α-Ga2O3 and α-Ga2O3/ε-Ga2O3 is investigated. Polymorphic epitaxial Ga2O3 layers are deposited by the method of chloride vapor-phase epitaxy on sapphire substrates. The contacts are made of Pt and Pt/Ti. It is discovered that the I–V characteristics of the Pt/α-Ga2O3/Pt and Pt/...
Published in Semiconductors
AbstractThe effects of the high-temperature (T = 1880°C) diffusion of beryllium ions and of electron irradiation on the optical properties of single-crystal aluminum nitride is studied. It is shown that the introduction of Be into AlN results in a change in the spectral characteristics of Raman scattering and infrared absorption. The analysis of Ra...
Published in Semiconductors
AbstractCopper zinc tin sulphide (CZTS) thin films have been deposited on glass substrate at 323 ± 5 K using sequential ionic layer adsorption reaction (SILAR). The number of SILAR cycles required for optimum crystalline quality CZTS thin films was optimized. The as-deposited CZTS thin films showed kesterite crystalline structure with preferential ...
Published in Semiconductors
AbstractA study of the electroluminescence of asymmetric InAs/InAs1 – ySby/InAsSbP light-emitting diode heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y = 0.15 and y = 0.16 in the temperature range 4.2–300 K is reported. It is found on the basis of experimental data that a staggered type-II heteroj...
Published in Semiconductors
AbstractThe propagation of solitary acoustic pulses in magnetized quantum electron–hole plasmas of semiconductors has been studied. The effects of an external magnetic field and quantum terms, including the electrons and holes quantum recoil effects, exchange-correlation force, and the degenerate pressure of charge carriers are considered. Starting...
Published in Semiconductors
AbstractIn the present paper, a Pb-free and eco-friendly perovskite solar cell (PSC) with a new structure of glass|TCO|TiO2|CZTSe1 –xSx|CH3NH3SnI3|back contact has been modeled and simulated by SCAPS-1D package. To verify the simulation process, an experimental report on Pb-free PSC was simulated initially. Then, the costly Spiro-OMeTAD layer as th...
Published in Semiconductors
An Erratum to this paper has been published: https://doi.org/10.1134/S1063782621030192
Published in Semiconductors
AbstractThe influence of the topology of electrodes on the electrical and photoelectric characteristics of metal–semiconductor–metal structures is studied. Gallium-oxide films are produced by the radio-frequency magnetron-assisted sputtering of a Ga2O3 target onto (0001)-oriented sapphire substrates. Two types of electrodes are formed on the surfac...
Published in Semiconductors
AbstractThe diffusion of indium atoms in silicon-dioxide films previously implanted with arsenic ions with different energies is studied in relation to the temperature of postimplantation annealing. It is established that the diffusion properties of indium depend on the presence of arsenic atoms in the film and their energy. An increase in the As c...
Published in Semiconductors
AbstractThe impact of the shape of indium-antimonide quantum dots on some important electrical parameters is investigated by the analysis of their optical spectra, transmission electron microscopy, scanning tunneling microscopy, particle size measurements, and scanning electron microscopy. It is shown that the real shape (spherical and cubic models...
