Weißhaupt, David Sürgers, Christoph Bloos, Dominik Funk, Hannes Simon Oehme, Michael Fischer, Gerda Schubert, Markus Andreas Wenger, Christian van Slageren, Joris Fischer, Inga Anita
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Published in
Semiconductor Science and Technology
Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mo...
Xu, Chi Wu, Zhengjie Li, Yue Wang, Xiaoyu Chang, Xiyan Xie, Changjiang Wang, Caile Chen, Chen Wang, Yixin Cong, Hui
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Published in
Semiconductor Science and Technology
Methods of deducing threading dislocation densities (TDDs) from x-ray diffraction (XRD) peak widths have been reevaluated based on crystallography theories. Moreover, Ge/Si heteroepitaxial structures were taken as model materials for investigation. The procedure is tailored in accordance with the specific designs of modern XRD systems to minimize i...
Zhou, Lixing Cui, Jialu Wang, Xiaolei Tian, Fengbin Zhu, Hui Gong, Manru Dai, Cong Zhang, Yamin Feng, Shiwei
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Semiconductor Science and Technology
This work investigates the current transient and trap characteristics of Si FeFET with HfZrO ferroelectric and SiON as the interfacial layer. The trap characteristics in the trapping/detrapping process based on the drain current and gate leakage current transients are analyzed. Four traps, denoted as DP1 (τ ∼ 0.1 s), DP2 (τ ∼ 1 s), DP3 (τ ∼ 10 s), ...
Kumari, Ritu Kumar, Rakesh
Published in
Semiconductor Science and Technology
In this study, we present a bottom-up solvothermal technique using tin tetrachloride pentahydrate (SnCl4.5H2O) and thioacetamide as precursors to synthesize SnS2 nanostructures. Different solvents including isopropyl alcohol, ethanol (EN), and ethylene glycol were used in the reaction to enhance the photodegradation efficiency of organic pollutants...
Sabat, Somesh Gartia, Anurag Sahoo, Kiran Kumar Biswal, Sameer Ranjan Pradhan, Diana Kar, Jyoti Prakash
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Semiconductor Science and Technology
The covellite phase of copper sulfide thin film (CuS), due to its excellent electronic, optical and chemical properties, has attracted enormous attention in cutting-edge research. This is a comprehensive study of the structural, optical, morphological and electrical properties of CuS thin films deposited by chemical bath deposition technique on fle...
Hile, D D Koao, L F Swart, H C Motloung, S V Ahemen, I Ndlangamandla, C L
Published in
Semiconductor Science and Technology
Zinc selenide (ZnSe) thin films were deposited on non-conducting glass substrates at different selenium concentrations using a photo-assisted chemical bath deposition method. The films were deposited for 2.0 h at 80 °C and annealed for 2.0 h at 250 °C. X-ray diffraction (XRD) revealed a hexagonal structure with preferential orientation along the (0...
Cascales, David Pimenta Barros, Patricia Martinez, Eugenie Ben Abbes, Riadh Salem, Bassem
Published in
Semiconductor Science and Technology
Plasma etching steps are critical for metal–oxide–semiconductor channel high electron mobility transistors gate fabrication as they can deteriorate electrical performances due to gallium nitride degradation. Adding SiCl4 to a low bias Cl2 plasma in presence of a SiN hard mask environment forms a silicon-based passivation layer that protects GaN fro...
Roy, Debamita Samajdar, Dip Prakash Biswas, Abhijit
Published in
Semiconductor Science and Technology
The photovoltaic performance of perpendicularly aligned GaAs0.99Bi0.01/CSC/ITO core–shell nanowire solar cells is thoroughly investigated in this simulation-based theoretical study for both electron-selective contact (ESC) and hole selective contact (HSC) as carrier selective contact (CSC) shell around GaAs0.99Bi0.01 core nanowire. The overall perf...
Xiao, Juncheng Ge, Shimin Jiang, Zhixiong Liu, Jing Yuan, Dong Liang, Ce Xu, Miao Li, Shan Xu, Hongyuan Wang, Xianlai
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Published in
Semiconductor Science and Technology
It is generally accepted that there is a trade-off relationship between mobility and stability for oxide thin film transistor (TFT) devices. Different doping ratios of Ln praseodymium (Pr) into indium (In) zinc (Zn) oxide have been employed as the active layer to get 1# and 2# amorphous oxide semiconductor (AOS) TFTs in this work. The 1#-based TFTs...
Guo, Xiao Ren, Min Zhang, Xin Zheng, Fang Liu, Siwei Zhou, Jianyu Zheng, Haowen Ma, Rongyao Li, Zehong Zhang, Bo
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Published in
Semiconductor Science and Technology
A novel two-dimensional mesh-like variation of lateral doping (VLD) termination (M-VLD) is proposed, which modifies the conventional ring-shaped track VLD termination (R-VLD) mask into an interconnected mesh-like structure. The comparative simulations and experiments show that M-VLD can achieve better blocking capability and reliability than R-VLD....