Sánchez, Fabiola De Bray Nair, M T S Nair, P K
Published in
Semiconductor Science and Technology
Thin films of SnS-CUB with a lattice constant of 11.6 Å, 32 units of SnS per cell and an optical bandgap (E g) of 1.7 eV (direct), are mostly produced by chemical techniques. This cubic polymorph is distinct from its orthorhombic polymorph (SnS-ORT) with an E g of 1.1 eV. This work is on the deposition of SnS-CUB thin films of 100–300 nm in thickne...
Babaee Touski, Shoeib Hosseini, Manouchehr Kokabi, Alireza
Published in
Semiconductor Science and Technology
In this paper, the structural, electronic and optical properties of tetragonal binary monolayers of MX (M = Sc, Y; X = As, Bi, N, P, Sb) are investigated using the density functional theory. The optical study demonstrates that ScN and YN compounds are promising anti-reflective materials. All compounds are found to be semiconductors with a bandgap i...
Lv, Xiurui Liu, Guipeng Mao, Bangyao Huang, Heyuan Zhao, Guijuan Yang, Jianhong
Published in
Semiconductor Science and Technology
The α-In2Se3 material is a two-dimensional ferroelectric semiconductor whose structural asymmetry gives it spontaneous polarization properties, and exhibits a direct bandgap structure when it is multilayered. α-In2Se3 is an n-type semiconductor, which is usually used in experiments to form heterojunctions with p-type semiconductors to prepare photo...
Park, Jeong-Hwan Pristovsek, Markus Wentao, Cai Kumabe, Takeru Choi, Soo-Young Lee, Dong-Seon Seong, Tae-Yeon Amano, Hiroshi
Published in
Semiconductor Science and Technology
In this letter, we investigate the impact of periphery, width, length and area on the external quantum efficiency (EQE) of stripe-type InGaN-based red micro-light-emitting diodes (µLEDs). A longer periphery resulted in a higher light extraction efficiency ( ηe ) via the sidewall regardless of the area of the µLEDs. However, as the injection current...
Zhang, Shengkuo Wang, Hongliang Zhang, Peng Cao, Gang
Published in
Semiconductor Science and Technology
This work aims to solve the problem of tradeoff between various properties and spurious mode suppression in surface acoustic wave (SAW) resonators. A high-angle rotated Y-cut LiNbO3 (LN)/SiO2/Si multilayered structure was proposed to balance the electromechanical coupling coefficient (K 2) and temperature coefficient of frequency (TCF), and the pro...
P, Sujith Parne, Saidi Reddy T, Abhinav
Published in
Semiconductor Science and Technology
In recent years, caesium bismuth iodide (Cs3Bi2I9), a lead (Pb)-free halide perovskite, has drawn more attention as a potential material than traditional semiconductor materials due to its lack of Pb toxicity and its outstanding stability against atmospheric air and moisture. Herein, the inverse temperature crystallization method is adopted to grow...
Demir, A Pakma, O Kariper, I A Özden, Ş Avci, N
Published in
Semiconductor Science and Technology
In this study, undoped and silver (Ag) doped hafnium oxide (HfO2) thin films were prepared by sol-gel dipping method and their effect as an interface material in a p-Si-based metal-oxide-semiconductor device was investigated for the first time. The structural effects of Ag doping were investigated using x-ray diffraction patterns. Al/HfO2:Ag/p-Si d...
Zare Pakzad, Sina Akinci, Seckin Karimzadehkhouei, Mehrdad Alaca, B Erdem
Published in
Semiconductor Science and Technology
Silicon nanowires are among the most promising nanotechnology building blocks in innovative devices with numerous applications as nanoelectromechanical systems. Downscaling the physical size of these devices and optimization of material functionalities by engineering their structure are two promising strategies for further enhancement of their perf...
Baek, Jaekeun An, Surin Park, Ahhyun Kim, Ki-Yeon Hong, Sang Jeen
Published in
Semiconductor Science and Technology
3D-NAND flash memory is currently essential in the semiconductor industry due to the interference issue between memory cells of the conventional planar type. In order to vertically stack the memory, an oxide–nitride stack structure is formed using plasma enhanced chemical vapor deposition (PECVD) equipment. Thereafter, part of the silicon nitride (...
Li, Luping Li, Zehong Chen, Peng Yang, Yuanzhen Rao, Qiansheng Wang, Tongyang Zhao, Yishang Yang, Yang Ren, Min
Published in
Semiconductor Science and Technology
When dealing with the super-junction insulated gate bipolar transistor (SJ-IGBT), due to its unipolar/bipolar mixed conduction mechanism, the approaches to improve its Von – Eoff are not exactly the same as for non-SJ IGBTs. In the pursuit of extremely low Eoff , a planar auxiliary anode gate SJ-IGBT (AAG-SJ-IGBT) is proposed based on a 650 V SJ-IG...
