Published in Microelectronic engineering
Most patients with acute infectious diseases develop fever, which is frequently a reason to visit health facilities in resource-limited settings. The symptomatic overlap between febrile diseases impedes their diagnosis on clinical grounds. Therefore, the World Health Organization promotes an integrated management of febrile illness. Along this line...
Published in Microelectronic Engineering
Published in Microelectronic Engineering
The mechanical stability of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) films spin coated onto a UV treated PET substrate was investigated. It was found that the UV exposure modifies the PET surface and improves the wetting conditions for PEDOT:PSS films deposition. The adhesion strength of PEDOT:PSS to UV treated PET surfac...
Published in Microelectronic Engineering
Published in Microelectronic Engineering
Published in Microelectronic Engineering
The purpose of this paper is to show the possibility for optimizing the post growth annealing process of CeO2 thin films sputtered on (111) Si by using in situ Raman characterization. In fact, the post growth annealing is an important step in the microelectronic process and consequently the studies, which permit to find the good annealing condition...
Published in Microelectronic Engineering
Published in Microelectronic Engineering
Published in Microelectronic Engineering
CdO nanorods were grown by sol–gel technique and the structural properties were analyzed by X-ray diffraction and AFM measurements. CdO films were grown onto p-type silicon substrates. Optical band gap was determined by optical absorption. The optical band gap of the CdO film was changed by Al dopant. Heterojunction diodes based on undoped and alum...
Published in Microelectronic Engineering
Solution processed dielectric layer was fabricated with octamethylcyclotetrasiloxane (OMTS) by UV/ozone oxidation and thermal annealing. Annealing temperatures of 100°C, 300°C, and 500°C were examined and their dielectric properties were characterized on structures of metal–insulator–silicon (MIS) capacitor and thin film transistor (TFT) with solut...
