In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures
In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures
In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures
Electrical characterization of microorganisms using microfabricated devices
Atomic Force Microscopy Study of Self-Assembled Si1-xGex Islands Produced by Controlled Relaxation of Strained Films
Self-assembled Si1−xGex islands were studied in detail using atomic force microscopy. The self-assembled Si1−xGex islands were formed by a novel two-step process. First, highly strained Si1−xGex thin films (with x∼0.4) were selectively grown on a silicon wafer by chemical vapor deposition at 650 °C. The growth was followed by an annealing step perf...
SOI Processes For The Fabrication Of Novel Nano-Structures
A process to form a silicon on insulator (SOI) structure suspended in air was demonstrated. The structure provided electrical isolation while providing good thermal contact to the substrate. Selective epitaxial growth (SEG) of silicon was to provide robust, reliable mechanical and electrical contacts between the SOI layer and the substrate. The pro...
Reduction of Sidewall Defect Induced Leakage Currents by the Use of Nitrided Field Oxides in Silicon Selective Epitaxial...
Defects in the near sidewall region in selective epitaxial growth of silicon have prevented its widespread use as a viable dielectric isolation technology. The main cause of these defects has been demonstrated to be thermal stress due to mismatch in the coefficient of thermal expansion between silicon and silicon dioxide. This article presents the ...
Stability of Boron And Phosphorus Implanted Tungsten Silicide Structures at HighTemperatures
We report on the stability of sputter-deposited tungsten silicide (WSi2.6) films that were implanted with boron or phosphorus and annealed at high temperatures using rapid thermal annealing. Depending on process conditions, some films were found to be unstable, resulting in peeling and lifting from the substrate. The regime of stability was experim...
Tungsten Silicide and Tungsten Polycide Anisotropic Dry Etch Process for Highly Controlled Dimensions and Profiles
Magnetic Circular Dichroism in Reflection Electron Energy Loss Spectroscopy
