Published in Japanese Journal of Applied Physics
In some waveguides, mutually opposing power flows are formed in the core and cladding. They give rise to forward and backward modes whose degeneracy results in the light-trapping mode. When the guiding modes become lossy, this mode degeneracy or formation of the light-trapping mode is forbidden if the loss is described as spatial attenuation but is...
Published in Japanese Journal of Applied Physics
The two-dimensional (2D) potential distribution for vertical trapezoidal doping thin-body fully depleted (FD) silicon-on-insulator (SOI) devices is derived by adopting the evanescent mode analysis method, in which the 2D effects in gate oxide region, channel region and buried oxide region are taken into account. Moreover, the effects of interface t...
Published in Japanese Journal of Applied Physics
We have characterized defects in κ-(In x Ga1–x )2O3 thin films grown on (001) FZ-grown ε-GaFeO3 substrates by mist CVD using TEM. We found two types of defects: dislocation half-loops and microdefects. The half-loops are U-shaped and lie on the (100) plane. From contrast experiment, their Burgers vector was determined to be parallel to 〈010〉. While...
Published in Japanese Journal of Applied Physics
We investigated the epitaxial relationship of an electron-beam-evaporated NiO film on a custom-ordered ( 1¯ 02) β-Ga2O3 substrate with a surface orientation rotated by 13.8° around [010] axis relative to the commonly-used (001) substrate. X-Ray diffraction and transmission electron microscopy measurements confirmed that the film was monocrystalline...
Published in Japanese Journal of Applied Physics
Effects of long-term low-temperature cap annealing on the net doping profile of Mg-ion-implanted GaN were studied using MOS structures before activation annealing. Mg ions were lightly implanted into n-type GaN to maintain the n-type conduction. Various cap-layer materials, i.e. Al2O3, SiN, SiO2 and capless, for low-temperature annealing were exami...
Published in Japanese Journal of Applied Physics
La(O,F)BiS2-x Se x is a layered material that is considered to be a candidate exotic superconductor as well as a promising thermoelectrical material. We performed soft X-ray photoelectron holography to study the Se incorporation site and the local atomic arrangement of the conducting layer. A comparison of the experimental holograms with the simula...
Published in Japanese Journal of Applied Physics
New equations for recombination lifetime calculation based on the open circuit voltage decay (OCVD) method were proposed. The new equations can yield accurate recombination lifetime values of the i-layer of PiN diodes in which a silicon epitaxial layer is employed, by eliminating the effects of carrier diffusion into p+ and n+ layers from the i-lay...
Published in Japanese Journal of Applied Physics
The differential response of the photosynthetic protein bacteriorhodopsin (bR) is highlighted as a means to emulate excitation and inhibition in neural response. We present a neuromorphic device that mimics a simple cell receptive field fabricated by patterning bR onto two transparent electrodes and sealing them with an electrolyte solution. The ar...
Published in Japanese Journal of Applied Physics
In this paper, the thermoreflectance (TR) coefficient of c-Si is numerically calculated over the wavelength range of 200–800 nm and the temperature range of 300–500 K using a complex permittivity model that considers interband transitions and free carriers. The calculated results are in good agreement with literature values, and it is found that th...
Published in Japanese Journal of Applied Physics
An integrated fluid circuit consisting of a pump and a fluidic switch is a basic unit in a microfluidic circuit. Here, we propose a fluidic switch using an elastic actuator due to an induced charge electro-osmosis (ICEO) combined with a natural convection (NC) pump and experimentally demonstrate the switching behavior between the two branch fluidic...
