Zenji Yatabe

Assistant Professor

Disciplines: Engineering Physics Materials Science

Research topics:

Kumamoto, Japan

https://www.mysciencework.com/profile/zenji.yatabe

Summary

Zenji Yatabe studied at the École normale supérieure de Cachan (ENS Cachan), France from 2005 to 2006 as a Ph.D. student under the Collège doctoral Franco-Japonais (CDFJ) program. He received his Ph.D. degree in Biochemistry and Biotechnology from the Tokyo University of Agriculture and Technology (TUAT), Japan, in 2008. He worked as a Post-doctoral fellow from 2009 to 2010 at the Université de Pau et des Pays de l'Adour (UPPA), France. He joined the Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo, Japan, in 2011. Since 2015, he has been an Assistant Professor with the Kumamoto University, Kumamoto, Japan. His current research interests include characterization and control of surfaces and interfaces of compound semiconductors.

Published articles Show More

Inverse integral transformation method to derive local viscosity distribution measured by optical tweezers

Hidema, Ruri Zenji Yatabe Takahashi, Hikari Higashikawa, Ryusei Suzuki, Hiroshi

Published in Soft Matter

Complex fluids have a non-uniform local inner structure; this is enhanced under deformation, inducing a characteristic flow, such as an abrupt increase in extensional viscosity and drag reduction. However, it is challenging to derive and quantify the non-uniform local structure of a low-concentration solution. In this study, we attempted to charact...

Structural characterization of mist chemical vapor deposited amorphous aluminum oxide films using water-free solvent

Zenji Yatabe NISHIYAMA, Koshi TSUDA, Takaaki NAKAMURA, Yusui

Published in Journal of the Ceramic Society of Japan

Excellent quality amorphous aluminum oxide (AlOx) thin films have been obtained by atmospheric pressure solution-processed mist chemical vapor deposition (mist-CVD) technique at 400°C using water-free solvent. X-ray fluorescence investigations verified the formation of AlOx film by the mist-CVD. X-ray diffraction, X-ray photoelectron spectroscopy, ...

On the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface by combined XPS and first-principl...

Escaño, Mary Clare S. Asubar, Joel T. Zenji Yatabe David, Melanie Y. Uenuma, Mutsunori Tokuda, Hirokuni Uraoka, Yukiharu Kuzuhara, Masaaki Tani, Masahiko

Published in Applied Surface Science

We conducted X-ray photoelectron spectroscopy (XPS) and first-principles calculations based on density functional theory (DFT) to confirm the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface. We note that the Ga 3d XPS peak broadens and shifts towards higher binding energies, which suggests surface oxide formation. Dec...

Conferences Show More

Epitaxial Growth of Non-polar ZnS on Sapphire Substrate by Mist Chemical Vapor Deposition

Okita, K. Goto, T. Tanaka, Y. Takenouchi, M. Yatabe, Z. Nakamura, Y. Zenji Yatabe

Published in Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials

Non-polar ZnS layers were epitaxially grown on mplane sapphire substrates by mist chemical vapor deposition at atmospheric pressure. For this growth, ZnO buffer layers were inserted between the ZnS and the sapphire because ZnO has an intermediate lattice constant.

Effects of Electronic States at Insulator/AlGaN Interfaces on Threshold Voltage Instability of Al2O3/AlGaN/GaN Structure...

Zenji Yatabe Asubar, J.T. Nakamura, Y. Hashizume, T.

Published in Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials

This paper presents the effects of the inductively coupled plasma (ICP) etching of AlGaN surface on the resulting threshold voltage (VTH) instability of Al2O3/AlGaN/GaN structures. It was found from the measured capacitance – voltage (C–V) characteristics that the ICP etching of the AlGaN surface showed larger VTH shifts than in the sample without ...

SnO2 thin films grown on m-plane sapphire substrate by mist chemical vapor deposition

Otabe, Tatsuya Sato, Takehide Matsushita, Junya Zenji Yatabe Sue, Koji Nagaoka, Shoji Nakamura, Yusui

Published in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

Tin dioxide (SnO 2 ) thin films, as a candidate for realizing next-generation power and optical devices, were grown on 2-inch diameter m-plane sapphire substrates by mist chemical vapor deposition at atmospheric pressure. The SnO 2 thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) in θ-2θ and ø scanning mo...

Experience

Assistant Professor Since 2015-

Kumamoto University (Kumamoto JP)

Specially Appointed Assistant Professor 2015- - 2015-

Hokkaido University (Sapporo JP)

Postdoctoral Fellow 2011- - 2015-

Hokkaido University (Sapporo JP)

Postdoctoral Fellow 2009- - 2010-

Université de Pau et des Pays de l'Adour (Pau FR)

Education

Ph.D. in Biochemistry and Biotechnology 2005- - 2008-

Tokyo University of Agriculture and Technology (Fuchu JP)

Collège Doctoral Franco-Japonais 2005- - 2006-

École normale supérieure de Cachan (Cachan FR)

Master of Agriculture 2003- - 2005-

Tokyo University of Agriculture and Technology (Fuchu JP)

Bachelor of Agriculture 1999- - 2003-

Tokyo University of Agriculture and Technology (Fuchu JP)

Awards

38th JSAP Paper Award 2016

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistor

Interests

Thin Films Compound Semiconductors Surfaces And Interfaces

Contact me

https://orcid.org/0000-0003-2069-6677

https://kumamoto-u.academia.edu/ZenjiYatabe

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