Zenji Yatabe studied at the École normale supérieure de Cachan (ENS Cachan), France from 2005 to 2006 as a Ph.D. student under the Collège doctoral Franco-Japonais (CDFJ) program. He received his Ph.D. degree in Biochemistry and Biotechnology from the Tokyo University of Agriculture and Technology (TUAT), Japan, in 2008. He worked as a Post-doctoral fellow from 2009 to 2010 at the Université de Pau et des Pays de l'Adour (UPPA), France. He joined the Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo, Japan, in 2011. Since 2015, he has been an Assistant Professor with the Kumamoto University, Kumamoto, Japan. His current research interests include characterization and control of surfaces and interfaces of compound semiconductors.
Structural characterization of mist chemical vapor deposited amorphous aluminum oxide films using water-free solvent
Published in Journal of the Ceramic Society of Japan
Excellent quality amorphous aluminum oxide (AlOx) thin films have been obtained by atmospheric pressure solution-processed mist chemical vapor deposition (mist-CVD) technique at 400°C using water-free solvent. X-ray fluorescence investigations verified the formation of AlOx film by the mist-CVD. X-ray diffraction, X-ray photoelectron spectroscopy, ...
On the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface by combined XPS and first-principl...
Published in Applied Surface Science
We conducted X-ray photoelectron spectroscopy (XPS) and first-principles calculations based on density functional theory (DFT) to confirm the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface. We note that the Ga 3d XPS peak broadens and shifts towards higher binding energies, which suggests surface oxide formation. Dec...
Published in Japanese Journal of Applied Physics
Aluminum titanium oxide (Al1–x Ti x O y , an alloy of Al2O3 and TiO2), an attractive high-κ dielectric material, was synthesized by mist chemical vapor deposition, utilizing Al2O3 and TiO2 precursors. X-ray diffraction investigations revealed that the Al1–x Ti x O y (0
Non-polar ZnS layers were epitaxially grown on mplane sapphire substrates by mist chemical vapor deposition at atmospheric pressure. For this growth, ZnO buffer layers were inserted between the ZnS and the sapphire because ZnO has an intermediate lattice constant.
Effects of Electronic States at Insulator/AlGaN Interfaces on Threshold Voltage Instability of Al2O3/AlGaN/GaN Structure...
This paper presents the effects of the inductively coupled plasma (ICP) etching of AlGaN surface on the resulting threshold voltage (VTH) instability of Al2O3/AlGaN/GaN structures. It was found from the measured capacitance – voltage (C–V) characteristics that the ICP etching of the AlGaN surface showed larger VTH shifts than in the sample without ...
Published in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
Tin dioxide (SnO 2 ) thin films, as a candidate for realizing next-generation power and optical devices, were grown on 2-inch diameter m-plane sapphire substrates by mist chemical vapor deposition at atmospheric pressure. The SnO 2 thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) in θ-2θ and ø scanning mo...
Assistant Professor Since 2015-
Kumamoto University (Kumamoto JP)
Specially Appointed Assistant Professor 2015- - 2015-
Hokkaido University (Sapporo JP)
Postdoctoral Fellow 2011- - 2015-
Hokkaido University (Sapporo JP)
Postdoctoral Fellow 2009- - 2010-
Ph.D. in Biochemistry and Biotechnology 2005- - 2008-
Collège Doctoral Franco-Japonais 2005- - 2006-
École normale supérieure de Cachan (Cachan FR)
Master of Agriculture 2003- - 2005-
Bachelor of Agriculture 1999- - 2003-
38th JSAP Paper Award 2016
Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistor