THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS
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Applicant
Ltd. BOE Technology Group Co.
Applicant
Ltd. Chongqing BOE Optoelectronics Technology Co.
Representative
Klunker IP Patentanwälte PartG mbB
Application number
EP19836448A1
Kind
A1
Document number
3910688
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THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS

3910688 - EP19836448A1 - EPO

Application Jan 07, 2019 - Publication Nov 17, 2021

Hongru ZHOU Zhonghao HUANG Xu WU Chao ZHANG Kai WANG

Abstract

A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The thin film transistor is provided on a base substrate and includes: an active layer including a first surface and a second surface which are opposite to each other, in which the second surface is closer to the base substrate than the first surface; and a source-drain electrode layer including a source electrode and a drain electrode which are separated from each other and are respectively connected with the active layer; each of the first surface and the second surface is a non-flat surface, and the non-flat surface includes a plurality of depressions and a plurality of protrusions which are alternately arranged. The active layer with uneven and non-flat surfaces has a larger heat dissipation area, which effectively avoids a reduction of electron mobility and a weakening of a driving force caused by thermal deformation, avoids a positive shift of a photo bias temperature stress curve, and keeps stability of characteristics of the TFT.

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